All Transistors. MMBR941L Datasheet

 

MMBR941L Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBR941L
   SMD Transistor Code: 7Y
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.25 W
   Maximum Collector-Base Voltage |Vcb|: 20 V
   Maximum Collector-Emitter Voltage |Vce|: 10 V
   Maximum Emitter-Base Voltage |Veb|: 1.5 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 8000 MHz
   Collector Capacitance (Cc): 0.35 pF
   Forward Current Transfer Ratio (hFE), MIN: 50
   Noise Figure, dB: -
   Package: SOT-23

 MMBR941L Transistor Equivalent Substitute - Cross-Reference Search

   

MMBR941L Datasheet (PDF)

 ..1. Size:64K  njs
mmbr941l.pdf

MMBR941L
MMBR941L

 0.1. Size:386K  motorola
mrf941 mmbr941lt1 mrf9411lt1 mrf947.pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR941LT1/DThe RF LineMMBR941NPN SiliconMRF941Low Noise, High-FrequencyMRF947TransistorsMRF9411Designed for use in high gain, low noise smallsignal amplifiers. This seriesfeatures excellent broadband linearity and is offered in a variety of packages.SERIES Fully Implanted Base and Emitter Structure

 9.1. Size:267K  motorola
mmbr901lt1 mps901 mrf901 mrf9011lt1.pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR901LT1/DThe RF LineMMBR901LT1, T3NPN SiliconMPS901 MRF901High-Frequency TransistorMRF9011LT1Designed primarily for use in highgain, lownoise smallsignal amplifiers foroperation up to 2.5 GHz. Also usable in applications requiring fast switchingtimes. High CurrentGain Bandwidth ProductIC

 9.2. Size:330K  motorola
mmbr951 mrf951 mrf957 mrf9511.pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR951ALT1/DThe RF LineMMBR951NPN SiliconMRF951Low Noise, High-FrequencyMRF957TransistorsMRF9511Designed for use in high gain, low noise smallsignal amplifiers. This seriesSERIESfeatures excellent broadband linearity and is offered in a variety of packages. Fully Implanted Base and Emitter Structure

 9.3. Size:53K  motorola
mmbr931l.pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR931LT1/DThe RF LineNPN SiliconMMBR931LT1High-Frequency TransistorDesigned primarily for use in lowpower amplifiers to 1.0 GHz. Ideal forpagers and other battery operated systems where power consumption iscritical. Available in tape and reel packaging options:T1 suffix = 3,000 units per reelRF AMPLIFIER

 9.4. Size:158K  motorola
mps911 mmbr911lt1.pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR911LT1/DThe RF LineMMBR911LT1NPN SiliconMPS911High-Frequency TransistorsDesigned for low noise, wide dynamic range frontend amplifiers andlownoise VCOs. Available in a surfacemountable plastic package, as well asIC = 60 mAthe popular TO226AA (TO92) package. This Motorola series of smallsig

 9.5. Size:54K  motorola
mmbr920l.pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1, T3High-Frequency Transistor. . . designed for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB

 9.6. Size:54K  motorola
mmbr920 .pdf

MMBR941L
MMBR941L

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBR920LT1/DThe RF LineNPN SiliconMMBR920LT1High-Frequency TransistorDesigned for thick and thinfilm circuits using surface mount componentsand requiring lownoise, highgain signal amplification at frequencies to 1.0GHz. High Gain Gpe = 15 dB Typ @ f = 500 MHz Low Noise NF = 2.4 dB Typ @ f =

 9.7. Size:60K  njs
mmbr931l.pdf

MMBR941L
MMBR941L

 9.8. Size:77K  njs
mmbr911l.pdf

MMBR941L
MMBR941L

 9.9. Size:61K  njs
mmbr901l.pdf

MMBR941L
MMBR941L

 9.10. Size:64K  njs
mmbr920l.pdf

MMBR941L
MMBR941L

 9.11. Size:64K  njs
mmbr951l.pdf

MMBR941L
MMBR941L

 9.12. Size:688K  blue-rocket-elect
mmbr911.pdf

MMBR941L
MMBR941L

MMBR911(BR3DG911M) Rev.C Feb.-2015 DATA SHEET / Descriptions SOT-23 NPN Silicon NPN transistor in a SOT-23 Plastic Package. / Features Low noise, high gain. / Applications High frequency amplifier applications. / Equivalent Circuit /

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , BC557 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2SD2328 | 3CG1955 | BF263 | 2SD2280 | PN2369A | 2SD2240 | BF322-3

 

 
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