MMBR951L Datasheet. Specs and Replacement
Type Designator: MMBR951L 📄📄
SMD Transistor Code: 7Z
Material of Transistor: Si
Polarity: NPN
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.322 W
Maximum Collector-Base Voltage |Vcb|: 20 V
Maximum Collector-Emitter Voltage |Vce|: 10 V
Maximum Emitter-Base Voltage |Veb|: 1.5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 8000 MHz
Collector Capacitance (Cc): 0.45 pF
Forward Current Transfer Ratio (hFE), MIN: 50
Package: SOT-23
MMBR951L Substitution
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MMBR951L datasheet
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MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBR901LT1/D The RF Line MMBR901LT1, T3 NPN Silicon MPS901 MRF901 High-Frequency Transistor MRF9011LT1 Designed primarily for use in high gain, low noise small signal amplifiers for operation up to 2.5 GHz. Also usable in applications requiring fast switching times. High Current Gain Bandwidth Product IC ... See More ⇒
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Detailed specifications: MM420, MM421, MMBR571L, MMBR901L, MMBR911L, MMBR920L, MMBR931L, MMBR941L, C1815, MMBT1015-H, MMBT1015-L, MMBT1116, MMBT1116A, MMBT1616, MMBT1616A, MMBT1815-H, MMBT1815-L
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History: 2SD1819A | BF240
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