MMBT3904WT1G Datasheet, Equivalent, Cross Reference Search

MMBT3904WT1G, NPN,SMMBT3904WT1G, NPN,MMBT3906WT1G, PNP,SMMBT3906WT1G, PNPGeneral Purposewww.onsemi.comTransistorsNPN and PNP SiliconCOLLECTOR3These transistors are designed for general purpose amplifierapplications. They are housed in the SOT-323/SC-70 package which1is designed for low power surface mount applications.BASEFeatures2 S Prefix for Automotive an

MMBT3904WT1, NPN,SMMBT3904WT1, NPN,MMBT3906WT1, PNPGeneral PurposeTransistorshttp://onsemi.comNPN and PNP SiliconCOLLECTORThese transistors are designed for general purpose amplifier3applications. They are housed in the SOT-323/SC-70 package whichis designed for low power surface mount applications.1BASEFeatures AEC-Q101 Qualified and PPAP Capable2 S Pref

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MMBT3904WT1, NPNMMBT3906WT1, PNPGeneral PurposeTransistorsNPN and PNP Siliconhttp://onsemi.comThese transistors are designed for general purpose amplifierCOLLECTORapplications. They are housed in the SOT-323/SC-70 package which3is designed for low power surface mount applications.Features1 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSBASEComplian

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAMMBT3904WT1/DGeneral Purpose TransistorsNPNNPN and PNP SiliconMMBT3904WT1PNPThese transistors are designed for general purpose amplifier applications. They arehoused in the SOT323/SC70 which is designed for low power surface mountMMBT3906WT1applications.MAXIMUM RATINGSRating Symbol Value UnitGENERAL PURPO

MMBT3904WNPN SiliconElektronische BauelementeGeneral Purpose TransistorRoHS Compliant ProductA suffix of "-C" specifies halogen & lead-freeFEATURESSOT-323(SC-70) Epitaxial Planar Die ConstructionDim Min MaxA Complementary PNP Type AvailableLA 1.800 2.200(MMBT3906W)B 1.150 1.3503 Ideal for Medium Power Amplification andS C 0.800 1.000Top ViewBSwitching

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productCOLLECTOR33BASE11MMBT3904WG22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCharacteristic Symbol

Zowie Technology CorporationGeneral Purpose TransistorNPN SiliconLead free productHalogen-free typeCOLLECTOR33BASE11MMBT3904WGH22SOT-323EMITTERMAXIMUM RATINGSRating Symbol Value UnitCollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 VdcEmitter-Base Voltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcTHERMAL CHARACTERISTICSCh

MMBT3904WCOLLECTOR3General Purpose Transistor3NPN Silicon1BASE122EMITTERSOT-323(SC-70)Maximum RatingsRating Symbol Value UnitCollector-Emitter Voltage V 40 VdcCEOCollector-Base Voltage VCBO 60 VdcEmitter-Base VOltage VEBO 6.0 VdcCollector Current-Continuous IC 200 mAdcThermal CharacteristicsCharacteristics Symbol Max UnitTotal Device Dissipation TA=

SMD Type TransistorsNPN TransistorsMMBT3904W Features Collector Current Capability IC=0.2A Collector Emitter Voltage VCEO=40V Complementary to MMBT3906W1 Base2 Emitter3 Collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO 60 Collector - Emitter Voltage VCEO 40 V Emitter - Base Voltage VEBO 5 Colle

MMBT3904WNPN GENERAL PURPOSE SWITCHING TRANSISTORUnitinch(mm)SOT-323150 mWattVOLTAGE 40 Volt POWERFEATURES NPN epitaxial silicon, planar design Collector-emitter voltage VCE = 40V0.087(2.20) Collector current IC = 200mA0.070(1.80) Lead free in compliance with EU RoHS 2.0 Green molding compound as per IEC 61249 standard 0.054(1.35)0.045(1.15)MEC

MMBT3904WNPN Silicon Epitaxial Planar Transistorfor switching and amplifier applicationsOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStorage Temperature Range

MMBT3904WMMBT3904WMMBT3904WMMBT3904WTRANSISTOR(NPN)MMBT39 0 4Wfor switching and amplifier applicationsSOT323 31. BASE 12. EMITTER 23. COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power

MMBT3904W MMBT3904W SOT-323 Silicon General Purpose Transistor (NPN) General description SOT-323 Silicon General Purpose Transistor (NPN) FEATURES Simplifies Circuit Design RoHS Compliant Green EMC Matte Tin(Sn) Lead Finish Weight: approx. 0.001g Absolute Maximum Ratings (TA = 25C unless otherwise noted) Symbol Parameter Value Units VCBO Collector

MMBT3904W NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications Marking Code: 1EOAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage VCBO 60 VCollector Emitter Voltage VCEO 40 VEmitter Base Voltage VEBO 6 VCollector Current IC 200 mA Total Power Dissipation Ptot 200 mWOJunction Temperature Tj 150 C OStor