All Transistors. MMBT4401LT1G Datasheet

 

MMBT4401LT1G Datasheet, Equivalent, Cross Reference Search


   Type Designator: MMBT4401LT1G
   SMD Transistor Code: 2X
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 40 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Collector Capacitance (Cc): 6.5 pF
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SOT-23

 MMBT4401LT1G Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT4401LT1G Datasheet (PDF)

 ..1. Size:152K  onsemi
mmbt4401lt1g.pdf

MMBT4401LT1G MMBT4401LT1G

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

 3.1. Size:155K  onsemi
mmbt4401lt1.pdf

MMBT4401LT1G MMBT4401LT1G

MMBT4401LT1GSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR3MAXIMUM RATINGS1Rating Symbol Value UnitBASECollector-Emitter Voltage VCEO 40 VdcCollector-Base Voltage VCBO 60 Vdc2EMITTEREmitter-Base Voltage VEBO 6.0 VdcCollector Current - Continuous IC 6

 3.2. Size:422K  willas
mmbt4401lt1.pdf

MMBT4401LT1G MMBT4401LT1G

FM120-M WILLASMMBT4401LT1THRUGeneral Purpose TransistorFM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeaturesBatch process design, excellent power dissipation offersWe declare that the material of product compliance with RoHS requirements. better reverse leakage current and thermal resistance.

 5.1. Size:147K  onsemi
mmbt4401l smmbt4401l.pdf

MMBT4401LT1G MMBT4401LT1G

MMBT4401L, SMMBT4401LSwitching TransistorNPN SiliconFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comhttp://onsemi.comCompliantCOLLECTOR AEC-Q101 Qualified and PPAP Capable3 S Prefix for Automotive and Other Applications Requiring UniqueSite and Control Change Requirements1BASEMAXIMUM RATINGS2Rating Symbol Value Uni

 5.2. Size:1544K  cn yongyutai
mmbt4401l mmbt4401h.pdf

MMBT4401LT1G MMBT4401LT1G

MMBT4401 TRANSI STOR (NPN)MARKING: Equivalent Circuit:SOT-231.BASE2.EMITTER3.COLLECTORFEATURES: Complimentary to MMBT4403 Collector Current: Ic=0.6A Switching TransistorMAXIMUM RATINGS (Ta=25 unless otherwise noted)Parameter Symbol Value UnitVCBO 60 VCollector-Base VoltageVCEO 40 VCollector-Emitter VoltageVEBO 6 VEmitter-Base VoltageIC 600 mAC

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: KTD1411 | LMBT3906TT1G

 

 
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