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MMBT5550GH Specs and Replacement


   Type Designator: MMBT5550GH
   Material of Transistor: Si
   Polarity: NPN
   Maximum Collector Power Dissipation (Pc): 0.225 W
   Maximum Collector-Base Voltage |Vcb|: 160 V
   Maximum Collector-Emitter Voltage |Vce|: 140 V
   Maximum Emitter-Base Voltage |Veb|: 6 V
   Maximum Collector Current |Ic max|: 0.6 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 60
   Noise Figure, dB: -
   Package: SOT-23

 MMBT5550GH Transistor Equivalent Substitute - Cross-Reference Search

   

MMBT5550GH detailed specifications

 ..1. Size:198K  zovie
mmbt5550gh mmbt5551gh.pdf pdf_icon

MMBT5550GH

Zowie Technology Corporation High Voltage Transistors Lead free product Halogen-free type FEATURE We declare that the material of product compliance with RoHS requirements. 3 COLLECTOR 3 MMBT5550GH 1 1 BASE MMBT5551GH 2 2 SOT-23 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO 140 Vdc Collector Base Voltage V CBO 160 Vdc Emitter B... See More ⇒

 6.1. Size:199K  motorola
mmbt5550 mmbt5551.pdf pdf_icon

MMBT5550GH

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBT5550LT1/D MMBT5550LT1 High Voltage Transistors * MMBT5551LT1 COLLECTOR NPN Silicon 3 *Motorola Preferred Device 1 BASE 2 3 EMITTER MAXIMUM RATINGS 1 Rating Symbol Value Unit 2 Collector Emitter Voltage VCEO 140 Vdc Collector Base Voltage VCBO 160 Vdc CASE 318 08, STYLE 6 SOT 23 (TO 236AB) Emitter... See More ⇒

 6.2. Size:105K  fairchild semi
mmbt5550.pdf pdf_icon

MMBT5550GH

August 2005 MMBT5550 NPN General Purpose Amplifier This device is designed for general purpose high voltage amplifiers and gas discharge display drivers. 3 2 SOT-23 1 Marking 1F 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol Parameter Value Units VCEO Collector-Emitter Voltage 140 V VCBO Collector-Base Voltage 160 V VEBO... See More ⇒

 6.3. Size:167K  onsemi
mmbt5550l mmbt5551l.pdf pdf_icon

MMBT5550GH

MMBT5550L, MMBT5551L High Voltage Transistors NPN Silicon Features S Prefix for Automotive and Other Applications Requiring Unique www.onsemi.com Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable COLLECTOR 3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit 2 EMITTER Collector... See More ⇒

Detailed specifications: MMBT5343-G , MMBT5343-L , MMBT5343-O , MMBT5343-Y , MMBT5401-G , MMBT5401GH , MMBT5401LT1G , MMBT5401WT1G , D667 , MMBT5550LT1G , MMBT5551GH , MMBT5551LT1G , MMBT5551M3 , MMBT589LT1G , MMBT5962 , MMBT6427LT1G , MMBT6428LT1 .

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