MMBT5551LT1G Datasheet, Equivalent, Cross Reference Search
Type Designator: MMBT5551LT1G
SMD Transistor Code: G1
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.225 W
Maximum Collector-Base Voltage |Vcb|: 180 V
Maximum Collector-Emitter Voltage |Vce|: 160 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SOT-23
MMBT5551LT1G Transistor Equivalent Substitute - Cross-Reference Search
MMBT5551LT1G Datasheet (PDF)
mmbt5551lt1g.pdf
MMBT5550L, MMBT5551L,SMMBT5551LHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures AEC-Q101 Qualified and PPAP CapableCOLLECTOR S Prefix for Automotive and Other Applications Requiring Unique3Site and Control Change Requirements These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS1BASECompliant2MAXIMUM RATINGSEMITTERRating Symbol Va
mmbt5550lt1 mmbt5551lt1.pdf
MMBT5550LT1G,MMBT5551LT1GHigh Voltage TransistorsNPN Siliconhttp://onsemi.comFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCOLLECTORCompliant3MAXIMUM RATINGS 1BASERating Symbol Value UnitCollector-Emitter Voltage VCEO Vdc2MMBT5550 140EMITTERMMBT5551160Collector-Base Voltage VCBO VdcMARKINGMMBT5550 1603DIAGRAMMMBT555118
mmbt5551lt1.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd. SOT-23 Plastic-Encapsulate Transistors SOT-23 MMBT5551LT1 TRANSISTOR (NPN) 1. BASE 2. EMITTER FEATURES 3. COLLECTOR Power dissipation 2. 4 PCM: 0.3 W (Tamb=25) 1. 3 Collector current ICM: 0.6 A Collector-base voltage V(BR)CBO: 180 V Operating and storage junction temperature range Unit: mm TJ, T
mmbt5550l mmbt5551l.pdf
MMBT5550L, MMBT5551LHigh Voltage TransistorsNPN SiliconFeatures S Prefix for Automotive and Other Applications Requiring Uniquewww.onsemi.comSite and Control Change Requirements; AEC-Q101 Qualified andPPAP CapableCOLLECTOR3 These Devices are Pb-Free, Halogen Free/BFR Free and are RoHSCompliant1BASEMAXIMUM RATINGSRating Symbol Value Unit2EMITTERCollector
mmbt5551l mmbt5551h.pdf
MMBT5551 TRANSISTOR(NPN) SOT-23 SOT-23 SOT-23 Plastic-Encapsulate Transistors Features MMBT5401 ; Complementary to MMBT5401 300mW; Power Dissipation of 300mW High Stability and High Reliability Mechanical Data : SOT-23 SOT-23 Small Outline Plastic Pack
Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
