MMBT8050 Datasheet. Specs and Replacement

Type Designator: MMBT8050  📄📄 

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.35 W

Maximum Collector-Base Voltage |Vcb|: 40 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 6 V

Maximum Collector Current |Ic max|: 0.6 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 100 MHz

Forward Current Transfer Ratio (hFE), MIN: 100

Noise Figure, dB: -

Package: SOT-23

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MMBT8050 datasheet

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MMBT8050

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MMBT8050

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MMBT8050

MMBT8050W (1.5A) NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications O Absolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value Unit Collector Base Voltage VCBO 40 V Collector Emitter Voltage VCEO 25 V Emitter Base Voltage VEBO 5 V Peak Collector Current ICM 1.5 A Total Power Dissipation Ptot 200 mW O Junction Temperature Tj 150 C O Storage Te... See More ⇒

 0.3. Size:351K  bytesonic

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MMBT8050

MMBT8050D o TRANSISTOR (NPN) FEATURES SOT-23 Complimentary to S8550 Collector Current IC=0.5A 1 BASE 2 EMITTER 3 COLLECTOR MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 40 V VCEO Collector-Emitter Voltage 25 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 0.5 A PC Collector Dissipat... See More ⇒

Detailed specifications: MMBT6428LT1, MMBT6428LT1G, MMBT6429LT1G, MMBT6515, MMBT6517LT1G, MMBT6520LT1G, MMBT6521LT1G, MMBT720, TIP41, MMBT8050D, MMBT8050LT1, MMBT8099LT1G, MMBT8550, MMBT8550LT1, MMBT9012LT1, MMBT9013LT1, MMBT9014LT1

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