MMBT9015LT1 Datasheet and Replacement

RoHS MMBT9015LT1PNP EPITAXIAL SILICON TRANSISTOR SOT-233LOW FREQRENCY,LOW NOISE AMPLIFIER1 Complemen to MMPT9014LT1 Collector-current:Ic=-100mA 2 Collector-Emiller Voltage:VCE=-45V1.1.BASE2.EMITTER2.43.COLLECTOR1.3Unit:mmoABSOLUTE MAXIMUM RATINGS (Ta=25 C)Symbol Rating UnitCharacteristicCollector-Base Voltage VCBO -50 VCollector-Emitter Voltage VV

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE 3 FEATURES *High total power dissipation. (450mW) 1*Excellent hFE linearity. 2*Complementary to UTC MMBT9014 SOT-23(JEDEC TO-236) ORDERING INFORMATION Pin Assignment Ordering Number Package Packing 1 2 3MMBT9015G-x-AE3-R SOT-23 E B C Tape ReelNote: Pin As

MMBT9015B / MMBT9015C / MMBT9015D PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications. As complementary types the NPN transistor MMBT9014B, MMBT9014C and MMBT9014D are recommended. SOT-23 Plastic Package OAbsolute Maximum Ratings (T = 25 C)aParameter Symbol Value Unit Collector Base Voltage -VCBO 50 V Collector Emitter Voltage -VCEO 45 V

MMBT9015 PNP Transistor FeaturesSOT-23 (TO-236) For Switching and Amplifier Applications. As Complementary Type of the PNP TransistorMMBT9014 is Recommended.1.Base 2.Emitter 3.CollectorAbsolute Maximum Ratings Ratings at 25 ambient temperature unless otherwise specified. Parameter Symbol Value UnitCollector Base Voltage -V 50 V CBOCollector Emitter Voltage