MMBTH10W Datasheet. Specs and Replacement

Type Designator: MMBTH10W  📄📄 

SMD Transistor Code: 3E

Material of Transistor: Si

Polarity: NPN

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.225 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 25 V

Maximum Emitter-Base Voltage |Veb|: 3 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 650 MHz

Collector Capacitance (Cc): 0.7 pF

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: SOT-323

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MMBTH10W datasheet

 ..1. Size:2102K  wietron

mmbth10w.pdf pdf_icon

MMBTH10W

MMBTH10W VHF/UHF Transistors COLLECTOR 3 3 P b Lead(Pb)-Free 1 1 2 BASE FEATURES 2 EMITTER SOT-323(SC-70) * We declare that the material of product compliance with RoHS requirements. Maximum Ratings (T =25 C Unlesso therwise noted) A Rating Symbol Value Unit VCEO Collector-Emitter Voltage 25 V 30 Collector-Base Voltage V V CBO 3.0 Emitter-Base Voltage V V EBO Col... See More ⇒

 7.1. Size:88K  motorola

mmbth10lt1rev0d.pdf pdf_icon

MMBTH10W

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by MMBTH10LT1/D MMBTH10LT1 VHF/UHF Transistor COLLECTOR NPN Silicon Motorola Preferred Device 3 1 BASE 3 2 1 EMITTER 2 CASE 318-08, STYLE 6 SOT-23 (TO-236AB) MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 25 Vdc Collector Base Voltage VCBO 30 Vdc Emitter Base Voltage VEBO 3.0 Vdc DEVI... See More ⇒

 7.2. Size:738K  fairchild semi

mmbth10 mpsh10.pdf pdf_icon

MMBTH10W

MPSH10 MMBTH10 C E C TO-92 E B B SOT-23 Mark 3E NPN RF Transistor This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. Sourced from Process 42. Absolute Maximum Ratings* TA = 25 C unless otherwise noted S... See More ⇒

 7.3. Size:45K  fairchild semi

mmbth10rg.pdf pdf_icon

MMBTH10W

MMBTH10RG NPN RF Transistor C This device is designed for use in low noise UHF/VHF amplifiers, with collector currents in the 100 A to 20 mA range in common emitter or common base mode of operations, and in low frequency drift, high output UHF oscillators. E Sourced from process 42. SOT-23 B Mark 3E 1. Base 2. Emitter 3. Collector Absolute Maximum Ratings* Ta=25 C un... See More ⇒

Detailed specifications: MMBTA63LT1G, MMBTA64LT1G, MMBTA70LT1G, MMBTA92-G, MMBTA92LT1G, MMBTH10-4LT1G, MMBTH10LT1G, MMBTH10M3, BC558, MMDT3904V, MMDT3906V, MMDT8050S, MMDT8150, MMDTA06, MMJD2955, MMJD3055, MMJT350T1G

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