All Transistors. MMJD2955 Datasheet

 

MMJD2955 Datasheet and Replacement


   Type Designator: MMJD2955
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 1.25 W
   Maximum Collector-Base Voltage |Vcb|: 70 V
   Maximum Collector-Emitter Voltage |Vce|: 60 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 10 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 2 MHz
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: TO-252
 

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MMJD2955 Datasheet (PDF)

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MMJD2955

MCCMicro Commercial ComponentsTM MMJD295520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates PNP epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation.Transistors Collector-cu

Datasheet: MMBTH10LT1G , MMBTH10M3 , MMBTH10W , MMDT3904V , MMDT3906V , MMDT8050S , MMDT8150 , MMDTA06 , A1013 , MMJD3055 , MMJT350T1G , MMS8050-H , MMS8050-L , MMS8550-H , MMS8550-L , MMS9012-H , MMS9012-L .

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