MMJD2955 Datasheet, Equivalent, Cross Reference Search
Type Designator: MMJD2955
Material of Transistor: Si
Polarity: PNP
Maximum Collector Power Dissipation (Pc): 1.25 W
Maximum Collector-Base Voltage |Vcb|: 70 V
Maximum Collector-Emitter Voltage |Vce|: 60 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 10 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 2 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: TO-252
MMJD2955 Transistor Equivalent Substitute - Cross-Reference Search
MMJD2955 Datasheet (PDF)
..1. Size:334K mcc
mmjd2955.pdf
mmjd2955.pdf
MCCMicro Commercial ComponentsTM MMJD295520736 Marilla Street ChatsworthMicro Commercial ComponentsCA 91311Phone: (818) 701-4933Fax: (818) 701-4939Features Silicon Lead Free Finish/RoHS Compliant(Note 1) ("P" Suffix designates PNP epitaxial planer RoHS Compliant. See ordering information) Capable of 1.25Watts of Power Dissipation.Transistors Collector-cu
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