S2SC4617G Datasheet, Equivalent, Cross Reference Search
Type Designator: S2SC4617G
SMD Transistor Code: B9
Material of Transistor: Si
Polarity: NPN
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 180 MHz
Collector Capacitance (Cc): 2 pF
Forward Current Transfer Ratio (hFE), MIN: 120
Noise Figure, dB: -
Package: SOT-416
S2SC4617G Transistor Equivalent Substitute - Cross-Reference Search
S2SC4617G Datasheet (PDF)
s2sc4617g.pdf
2SC4617G, S2SC4617GNPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Reduces
2sc4617g s2sc4617g.pdf
2SC4617G, S2SC4617GNPN Silicon GeneralPurpose AmplifierTransistorThis NPN transistor is designed for general purpose amplifierapplications. This device is housed in the SC-75/SOT-416 package http://onsemi.comwhich is designed for low power surface mount applications, whereboard space is at a premium.NPN GENERAL PURPOSEAMPLIFIER TRANSISTORSFeaturesSURFACE MOUNT Reduces
Datasheet: 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .
History: 2SA1210
