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S2SC4617G Datasheet, Equivalent, Cross Reference Search

Type Designator: S2SC4617G

SMD Transistor Code: B9

Material of Transistor: Si

Polarity: NPN

Maximum Collector Power Dissipation (Pc): 0.125 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 2 pF

Forward Current Transfer Ratio (hFE), MIN: 120

Noise Figure, dB: -

Package: SOT-416

S2SC4617G Transistor Equivalent Substitute - Cross-Reference Search

 

S2SC4617G Datasheet (PDF)

1.1. s2sc4617g.pdf Size:54K _upd

S2SC4617G
S2SC4617G

2SC4617G, S2SC4617G NPN Silicon General Purpose Amplifier Transistor This NPN transistor is designed for general purpose amplifier applications. This device is housed in the SC-75/SOT-416 package http://onsemi.com which is designed for low power surface mount applications, where board space is at a premium. NPN GENERAL PURPOSE AMPLIFIER TRANSISTORS Features SURFACE MOUNT • Reduces

Datasheet: RTE13LFM , RXT2222A , RXT2907A , S1015 , S1815 , S2000N , S2055N , S2SA1774G , BC327 , S-L2SA2030M3T5G , S-L2SC3837T1G , UD2195 , UMF21N , UMF5N , BCR108F , BCR112W , BCR116S .

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