CHEMB3GP Datasheet. Specs and Replacement
Type Designator: CHEMB3GP 📄📄
SMD Transistor Code: B3
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Package: SOT-563
CHEMB3GP Substitution
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CHEMB3GP datasheet
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CHENMKO ENTERPRISE CO.,LTD CHEMB4GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabil... See More ⇒
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Detailed specifications: CHDTD123EKGP, CHDTD123TKGP, CHDTD123YKGP, CHDTD133HKGP, CHDTD143TKGP, CHEMB10GP, CHEMB11GP, CHEMB2GP, TIP35C, CHEMB4GP, CHEMB6GP, CHEMB9GP, CHEMD12GP, CHEMD22GP, CHEMD2GP, CHEMD37GP, CHEMD3GP
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