CHEMB9GP Datasheet. Specs and Replacement
Type Designator: CHEMB9GP 📄📄
SMD Transistor Code: B9
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SOT-563
CHEMB9GP Substitution
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CHEMB9GP datasheet
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Detailed specifications: CHDTD133HKGP, CHDTD143TKGP, CHEMB10GP, CHEMB11GP, CHEMB2GP, CHEMB3GP, CHEMB4GP, CHEMB6GP, BC558, CHEMD12GP, CHEMD22GP, CHEMD2GP, CHEMD37GP, CHEMD3GP, CHEMD4GP, CHEMD5GP, CHEMD8GP
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