CHEMH9GP Datasheet. Specs and Replacement
Type Designator: CHEMH9GP
SMD Transistor Code: H9
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.21
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 6 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SOT-563
CHEMH9GP Substitution
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CHEMH9GP datasheet
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CHENMKO ENTERPRISE CO.,LTD CHEMH1GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-563) SOT-563 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabilit... See More ⇒
Detailed specifications: CHEMG9GP, CHEMH10GP, CHEMH11GP, CHEMH1GP, CHEMH2GP, CHEMH3GP, CHEMH4GP, CHEMH6GP, BC549, CHFMA10GP, CHFMA11GP, CHFMA2GP, CHFMA3GP, CHFMA4GP, CHFMA5GP, CHFMA7GP, CHFMA8GP
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