CHUMD12GP Specs and Replacement
Type Designator: CHUMD12GP
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 68
Package: SOT-363
CHUMD12GP Substitution
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CHUMD12GP datasheet
CHENMKO ENTERPRISE CO.,LTD CHUMD12GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) SC-88/SOT-363 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation curr... See More ⇒
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CHENMKO ENTERPRISE CO.,LTD CHUMD6GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) SC-88/SOT-363 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cur... See More ⇒
CHENMKO ENTERPRISE CO.,LTD CHUMD2GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 30 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88/SOT-363) SC-88/SOT-363 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation curre... See More ⇒
Detailed specifications: CHUMB3GP, CHUMB4GP, CHUMB6GP, CHUMB8GP, CHUMB9GP, CHUMC2GP, CHUMC3GP, CHUMC4GP, TIP35C, CHUMD2GP, CHUMD3GP, CHUMD47GP, CHUMD4GP, CHUMD5GP, CHUMD6GP, CHUMD9GP, CHUMG11GP
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