CHUMD2GP Datasheet. Specs and Replacement
Type Designator: CHUMD2GP 📄📄
SMD Transistor Code: ED
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 56
Package: SOT-363
CHUMD2GP Substitution
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CHUMD2GP datasheet
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Detailed specifications: CHUMB4GP, CHUMB6GP, CHUMB8GP, CHUMB9GP, CHUMC2GP, CHUMC3GP, CHUMC4GP, CHUMD12GP, BD135, CHUMD3GP, CHUMD47GP, CHUMD4GP, CHUMD5GP, CHUMD6GP, CHUMD9GP, CHUMG11GP, CHUMG1GP
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