CHUMD47GP Datasheet and Replacement
Type Designator: CHUMD47GP
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 10 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 20
Noise Figure, dB: -
Package: SOT-363
CHUMD47GP Substitution
CHUMD47GP Datasheet (PDF)
chumd47gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMD47GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur
chumd4gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHUMD4GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 50 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 70 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloect
chumd5gp.pdf
CHENMKO ENTERPRISE CO.,LTDSURFACE MOUNTCHUMD5GPDual Digital Silicon TransistorDTr1:VOLTAGE 50 Volts CURRENT 30 mAmpereDTr2:VOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloec
chumd6gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHUMD6GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-88/SOT-363)SC-88/SOT-363* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cur
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