CHUMG8GP Datasheet. Specs and Replacement
Type Designator: CHUMG8GP 📄📄
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.15 W
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SOT-353
CHUMG8GP Substitution
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CHUMG8GP datasheet
CHENMKO ENTERPRISE CO.,LTD CHUMG8GP SURFACE MOUNT NPN Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 100 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cur... See More ⇒
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CHENMKO ENTERPRISE CO.,LTD CHUMG9GP SURFACE MOUNT Dual Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 50 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-88A/SOT-353) SC-88A/SOT353 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cur... See More ⇒
Detailed specifications: CHUMD9GP, CHUMG11GP, CHUMG1GP, CHUMG2GP, CHUMG3GP, CHUMG4GP, CHUMG5GP, CHUMG6GP, A1013, CHUMG9GP, CHUMH10GP, CHUMH11GP, CHUMH14GP, CHUMH1GP, CHUMH2GP, CHUMH3GP, CHUMH42GP
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