DMC26102 Specs and Replacement
Type Designator: DMC26102
SMD Transistor Code: F5
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: MINI5-G3-B
DMC26102 Substitution
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DMC26102 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DMC26102 Silicon NPN epitaxial planar type For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1 Base (Tr1) 4 Collector (Tr2)... See More ⇒
January 2007 FDMC2610 tm N-Channel UltraFET Trench MOSFET 200V, 9.5A, 200m Features General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5A process. It has been optimized for power management Low Profile - 1mm max in a Pow... See More ⇒
Detailed specifications: DMA96402, DMA96403, DMA96406, DMA96407, DMA9640M, DMA9640T, DMC26100, DMC26101, S8050, DMC26103, DMC26104, DMC26105, DMC26106, DMC2610E, DMC26400, DMC26401, DMC26402
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