All Transistors. DMC26103 Datasheet

 

DMC26103 Datasheet and Replacement


   Type Designator: DMC26103
   SMD Transistor Code: G9
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: MINI5-G3-B
 

 DMC26103 Substitution

   - BJT ⓘ Cross-Reference Search

   

DMC26103 Datasheet (PDF)

 ..1. Size:363K  panasonic
dmc26103.pdf pdf_icon

DMC26103

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26103Silicon NPN epitaxial planar typeFor digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini5-G3-B Eco-friendly Halogen-free package Pin Name 1: Base (Tr1) 4: Collector (Tr2)

 7.1. Size:396K  fairchild semi
fdmc2610.pdf pdf_icon

DMC26103

January 2007FDMC2610tmN-Channel UltraFET Trench MOSFET 200V, 9.5A, 200mFeatures General Description Max rDS(on) = 200m at VGS = 10V, ID = 2.2AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench Max rDS(on) = 215m at VGS = 6V, ID = 1.5Aprocess. It has been optimized for power management Low Profile - 1mm max in a Pow

 7.2. Size:359K  panasonic
dmc26100.pdf pdf_icon

DMC26103

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26100Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

 7.3. Size:356K  panasonic
dmc26106.pdf pdf_icon

DMC26103

This product complies with the RoHS Directive (EU 2002/95/EC).DMC26106Silicon NPN epitaxial planar typeFor digital circuits Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini5-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name

Datasheet: DMA96403 , DMA96406 , DMA96407 , DMA9640M , DMA9640T , DMC26100 , DMC26101 , DMC26102 , BC337 , DMC26104 , DMC26105 , DMC26106 , DMC2610E , DMC26400 , DMC26401 , DMC26402 , DMC26403 .

History: 2SD1324 | TN2221AR

Keywords - DMC26103 transistor datasheet

 DMC26103 cross reference
 DMC26103 equivalent finder
 DMC26103 lookup
 DMC26103 substitution
 DMC26103 replacement

 

 
Back to Top

 


 
.