DMG26412 Datasheet. Specs and Replacement
Type Designator: DMG26412
SMD Transistor Code: S9
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.3 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.5 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 50
Package: MINI6-G4-B
DMG26412 Substitution
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DMG26412 datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DMG26412 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini6-G4-B Pin Name Basic Part Number 1 Emitter (Tr1) 4... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DMG264H0 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini6-G4-B Eco-friendly Halogen-free package ... See More ⇒
Detailed specifications: DMC9640N, DMG26301, DMG26302, DMG26401, DMG26402, DMG26404, DMG26405, DMG26406, TIP41C, DMG264H0, DMG56301, DMG56302, DMG56306, DMG563H1, DMG563H4, DMG563H5, DMG563HA
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