DMG9640M Datasheet. Specs and Replacement
Type Designator: DMG9640M
SMD Transistor Code: S5
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 2.2 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.047
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.125 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 80
Package: SSMINI6-F3-B
DMG9640M Substitution
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DMG9640M datasheet
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This product complies with the RoHS Directive (EU 2002/95/EC). DMG96401 Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits DMG56401 in SSMini6 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSMini6-F3-B E... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DMG9640T Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) For digital circuits Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) SSMini6-F3-B Contributes to miniaturization of sets, reduction of component ... See More ⇒
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Detailed specifications: DMG963HD, DMG963HE, DMG96401, DMG96402, DMG96403, DMG96404, DMG96405, DMG96406, BC327, DMG9640N, DMG9640T, DMG964H1, DMG964H3, DMG964H5, DRA2113Z, DRA2114E, DRA2114T
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