DRA2124E Datasheet. Specs and Replacement

Type Designator: DRA2124E

SMD Transistor Code: LE

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: MINI3-G3-B

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DRA2124E datasheet

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DRA2124E

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DRA2124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2124T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒

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DRA2124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2124X Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2124X Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name E... See More ⇒

 8.1. Size:349K  panasonic

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DRA2124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2123Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1 Ba... See More ⇒

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Detailed specifications: DRA2114T, DRA2114Y, DRA2115E, DRA2115G, DRA2115T, DRA2123E, DRA2123J, DRA2123Y, TIP127, DRA2124T, DRA2124X, DRA2143E, DRA2143T, DRA2143X, DRA2143Y, DRA2143Z, DRA2144E

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