DRA2143E Datasheet. Specs and Replacement
Type Designator: DRA2143E
SMD Transistor Code: L5
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 4.7 kOhm
Typical Resistor Ratio R1/R2 = 1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 20
Package: MINI3-G3-B
DRA2143E Substitution
- BJT ⓘ Cross-Reference Search
DRA2143E datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2143Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143Y Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2143T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒
Detailed specifications: DRA2115G, DRA2115T, DRA2123E, DRA2123J, DRA2123Y, DRA2124E, DRA2124T, DRA2124X, 2SC2625, DRA2143T, DRA2143X, DRA2143Y, DRA2143Z, DRA2144E, DRA2144T, DRA2144V, DRA2144W
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