DRA2143X Datasheet. Specs and Replacement

Type Designator: DRA2143X

SMD Transistor Code: L6

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 4.7 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 0.47

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: MINI3-G3-B

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DRA2143X datasheet

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DRA2143X

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DRA2143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2143Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143Y Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco-... See More ⇒

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DRA2143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2143T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒

 7.3. Size:348K  panasonic

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DRA2143X

This product complies with the RoHS Directive (EU 2002/95/EC). DRA2143Z Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2143Z Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component count. Pin Name ... See More ⇒

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Detailed specifications: DRA2123E, DRA2123J, DRA2123Y, DRA2124E, DRA2124T, DRA2124X, DRA2143E, DRA2143T, 8550, DRA2143Y, DRA2143Z, DRA2144E, DRA2144T, DRA2144V, DRA2144W, DRA2152Z, DRA2514E

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