DRA2144W Datasheet. Specs and Replacement
Type Designator: DRA2144W
SMD Transistor Code: LK
Material of Transistor: Si
Polarity: Pre-Biased-PNP
Built in Bias Resistor R1 = 47 kOhm
Built in Bias Resistor R2 = 22 kOhm
Typical Resistor Ratio R1/R2 = 2.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 60
Package: MINI3-G3-B
DRA2144W Substitution
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DRA2144W datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRA2144T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC2144T Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) Mini3-G3-B Contributes to miniaturization of sets, reduction of component c... See More ⇒
Detailed specifications: DRA2143E, DRA2143T, DRA2143X, DRA2143Y, DRA2143Z, DRA2144E, DRA2144T, DRA2144V, 2SB817, DRA2152Z, DRA2514E, DRA2522J, DRA2523E, DRA2523Y, DRA2533Q, DRA2543E, DRA2L14Y
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