DRA4124E Datasheet. Specs and Replacement

Type Designator: DRA4124E

SMD Transistor Code: LE

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 22 kOhm

Built in Bias Resistor R2 = 22 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 60

Noise Figure, dB: -

Package: NS-B2-B-B

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DRA4124E datasheet

 ..1. Size:348K  panasonic

 dra4124e.pdf pdf_icon

DRA4124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124E Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124E DRA2124E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p... See More ⇒

 7.1. Size:221K  panasonic

 dra4124t.pdf pdf_icon

DRA4124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4124T Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4124T DRA2124T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat... See More ⇒

 8.1. Size:223K  panasonic

 dra4123y.pdf pdf_icon

DRA4124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4123Y Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123Y DRA2123Y in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p... See More ⇒

 8.2. Size:223K  panasonic

 dra4123j.pdf pdf_icon

DRA4124E

This product complies with the RoHS Directive (EU 2002/95/EC). DRA4123J Silicon PNP epitaxial planar type For digital circuits Complementary to DRC4123J DRA2123J in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free... See More ⇒

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Detailed specifications: DRA3A43Z, DRA3A44E, DRA4113Z, DRA4114E, DRA4114T, DRA4114Y, DRA4123J, DRA4123Y, C5198, DRA4124T, DRA4143E, DRA4143T, DRA4143X, DRA4143Z, DRA4144E, DRA4144T, DRA4144V

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