All Transistors. DRA4144E Datasheet

 

DRA4144E Datasheet and Replacement


   Type Designator: DRA4144E
   SMD Transistor Code: LL
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.3 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: NS-B2-B-B
 

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DRA4144E Datasheet (PDF)

 ..1. Size:350K  panasonic
 dra4144e.pdf pdf_icon

DRA4144E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144EDRA2144E in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

 7.1. Size:220K  panasonic
 dra4144t.pdf pdf_icon

DRA4144E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144TDRA2144T in NS through hole type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) NS-B2-B-B Contributes to miniat

 7.2. Size:190K  panasonic
 dra4144v.pdf pdf_icon

DRA4144E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144V (Tentative)Silicon PNP epitaxial planar typeFor digital circuits Packaging PackageRadial type: 5000 pcs / carton Code NS-B1-B Absolute Maximum Ratings Ta = 25C Pin NameParameter Symbol Rating Unit 1: Emitter 2: CollectorCollector-base voltage (Emitter open) VCBO 50 V 3: BaseC

 7.3. Size:223K  panasonic
 dra4144w.pdf pdf_icon

DRA4144E

This product complies with the RoHS Directive (EU 2002/95/EC).DRA4144WSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC4144WDRA2144W in NS through hole type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction NS-B2-B-B Eco-friendly Halogen-free p

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Datasheet: DRA4123J , DRA4123Y , DRA4124E , DRA4124T , DRA4143E , DRA4143T , DRA4143X , DRA4143Z , 2N3906 , DRA4144T , DRA4144V , DRA4144W , DRA4152Z , DRA4514E , DRA4523E , DRA4523Y , DRA4543E .

History: CD9014A | MJ10015 | 3DD13003B | 2S156 | UPT721 | EN3904

Keywords - DRA4144E transistor datasheet

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