All Transistors. DRA5114Y Datasheet

 

DRA5114Y Datasheet and Replacement


   Type Designator: DRA5114Y
   SMD Transistor Code: LC
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 47 kOhm
   Typical Resistor Ratio R1/R2 = 0.21
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SMINI3-F2-B
 

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DRA5114Y Datasheet (PDF)

 ..1. Size:413K  panasonic
 dra5114y.pdf pdf_icon

DRA5114Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114YSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114YDRA2114Y in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free

 7.1. Size:414K  panasonic
 dra5114t.pdf pdf_icon

DRA5114Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114TDRA2114T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

 7.2. Size:414K  panasonic
 dra5114e.pdf pdf_icon

DRA5114Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5114ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5114EDRA2114E in SMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SMini3-F2-B Eco-friendly Halogen-free

 8.1. Size:418K  panasonic
 dra5115t.pdf pdf_icon

DRA5114Y

This product complies with the RoHS Directive (EU 2002/95/EC).DRA5115TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRC5115TDRA2115T in SMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SMini3-F2-B Contributes to miniaturizati

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Datasheet: DRA4152Z , DRA4514E , DRA4523E , DRA4523Y , DRA4543E , DRA5113Z , DRA5114E , DRA5114T , S8050 , DRA5115E , DRA5115G , DRA5115T , DRA5123E , DRA5123J , DRA5123Y , DRA5124E , DRA5124T .

History: SM3160 | CC337 | BRY56 | 2N165 | 2SB972

Keywords - DRA5114Y transistor datasheet

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