All Transistors. DRAF143E Datasheet

 

DRAF143E Datasheet and Replacement


   Type Designator: DRAF143E
   SMD Transistor Code: L5
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 4.7 kOhm
   Built in Bias Resistor R2 = 4.7 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.1 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 20
   Noise Figure, dB: -
   Package: ML3-N4-B
 

 DRAF143E Substitution

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DRAF143E Datasheet (PDF)

 ..1. Size:225K  panasonic
 draf143e.pdf pdf_icon

DRAF143E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143ESilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143EDRA3143E in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

 7.1. Size:226K  panasonic
 draf143x.pdf pdf_icon

DRAF143E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143XSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143XDRA3143X in ML3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, mount area reduction ML3-N4-B Eco-friendly Halogen-free packagePac

 7.2. Size:226K  panasonic
 draf143z.pdf pdf_icon

DRAF143E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143ZSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143ZDRA3143Z in ML3 type package Features Package High forward current transfer ratio hFE Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of sets, mount area reductio

 7.3. Size:223K  panasonic
 draf143t.pdf pdf_icon

DRAF143E

This product complies with the RoHS Directive (EU 2002/95/EC).DRAF143TSilicon PNP epitaxial planar typeFor digital circuitsComplementary to DRCF143TDRA3143T in ML3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) ML3-N4-B Contributes to miniaturization of

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Datasheet: 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

Keywords - DRAF143E transistor datasheet

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