DRC2113Z Datasheet. Specs and Replacement
Type Designator: DRC2113Z
SMD Transistor Code: N1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: MINI3-G3-B
DRC2113Z Substitution
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DRC2113Z datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2115E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2115E Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1 Ba... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2114Y Silicon NPN epitaxial planar type For digital circuits Complementary to DRA2114Y Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. Mini3-G3-B Eco-friendly Halogen-free package Pin Name 1 Ba... See More ⇒
Detailed specifications: DRAF123Y, DRAF124E, DRAF124T, DRAF124X, DRAF143E, DRAQA24X, DRAQA44T, DRAQA52Z, TIP122, DRC2114E, DRC2114T, DRC2114W, DRC2114Y, DRC2115E, DRC2115G, DRC2115T, DRC2123E
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