DRC2614T Datasheet. Specs and Replacement
Type Designator: DRC2614T
SMD Transistor Code: VT
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 100
Package: MINI3-G3-B
DRC2614T Substitution
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DRC2614T datasheet
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2614T Silicon NPN epitaxial planar type For digital circuits / muting Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1 Base Embossed type (Thermo-compression sealing) 3000 pcs / ... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRC2643T Silicon NPN epitaxial planar type For digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1 Base Embossed type (Thermo-compression sealing) 3000 pcs / reel (sta... See More ⇒
Detailed specifications: DRC2144T, DRC2144V, DRC2144W, DRC2152Z, DRC2514E, DRC2523E, DRC2523Y, DRC2543E, BC546, DRC2643T, DRC3113Z, DRC3114E, DRC3114T, DRC3114W, DRC3114Y, DRC3115E, DRC3115G
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History: 2SB895 | LMBT3904LT3G
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