DRC2614T Datasheet, Equivalent, Cross Reference Search
Type Designator: DRC2614T
SMD Transistor Code: VT
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 10 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 30 V
Maximum Collector-Emitter Voltage |Vce|: 20 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.6 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: MINI3-G3-B
DRC2614T Transistor Equivalent Substitute - Cross-Reference Search
DRC2614T Datasheet (PDF)
drc2614t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2614TSilicon NPN epitaxial planar typeFor digital circuits / muting Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs /
drc2643t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC2643TSilicon NPN epitaxial planar typeFor digital circuits Features Package Contributes to miniaturization of sets, reduction of component count. Code Eco-friendly Halogen-free package Mini3-G3-B Pin Name Packaging 1: BaseEmbossed type (Thermo-compression sealing): 3000 pcs / reel (sta
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