DRC3113Z Datasheet, Equivalent, Cross Reference Search
Type Designator: DRC3113Z
SMD Transistor Code: N1
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.1
W
Maximum Collector-Base Voltage |Vcb|: 50
V
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Forward Current Transfer Ratio (hFE), MIN: 30
Noise Figure, dB: -
Package: SSSMINI3-F2-B
DRC3113Z Transistor Equivalent Substitute - Cross-Reference Search
DRC3113Z Datasheet (PDF)
drc3113z.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3113ZSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3113ZDRC9113Z in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114TDRC9114T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturiza
drc3115t.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115TSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115TDRC9115T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturi
drc3115g.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115GSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115GDRC9115G in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114EDRC9114E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114y.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114YSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114YDRC9114Y in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3114w.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3114WSilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3114WDRC9114W in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
drc3115e.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).DRC3115ESilicon NPN epitaxial planar typeFor digital circuitsComplementary to DRA3115EDRC9115E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge
Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
