DRC3A13Z Datasheet. Specs and Replacement
Type Designator: DRC3A13Z
SMD Transistor Code: J2
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 1 kOhm
Built in Bias Resistor R2 = 10 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.1 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.08 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 30
Package: SSSMINI3-F2-B
DRC3A13Z Substitution
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DRC3A13Z datasheet
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This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A14E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A14E DRC9A14E in SSSMini3 type package Package Features Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniaturization of sets, reduction of component count. Pin Name Eco... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A15E Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A15E DRC9A15E in SSSMini3 type package Features Package Low collector-emitter saturation voltage VCE(sat) Code Contributes to miniaturization of sets, reduction of component count. SSSMini3-F2-B Eco-friendly Haloge... See More ⇒
This product complies with the RoHS Directive (EU 2002/95/EC). DRC3A14T Silicon NPN epitaxial planar type For digital circuits Complementary to DRA3A14T DRC9A14T in SSSMini3 type package Features Package High forward current transfer ratio hFE with excellent linearity Code Low collector-emitter saturation voltage VCE(sat) SSSMini3-F2-B Contributes to miniatu... See More ⇒
Detailed specifications: DRC3143Y, DRC3143Z, DRC3144E, DRC3144G, DRC3144T, DRC3144V, DRC3144W, DRC3152Z, NJW0281G, DRC3A14E, DRC3A14T, DRC3A14Y, DRC3A15E, DRC3A23J, DRC3A24E, DRC3A43E, DRC3A43T
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