DTA113ZEFRA Datasheet and Replacement

DTA113Z seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value EMT3 UMT3VCC-50VIC(MAX.)-100mA R11kDTA113ZE DTA113ZUAR2 SOT-416(SC-75A) SOT-323(SC-70)10k SMT3 lFeaturesl1) Built-In Biasing Resistors2) Built-in bias

TransistorsDigital transistors (built-in resistors)DTA113ZE / DTA113ZUA / DTA113ZKA /DTA113ZSAFFeatures FExternal dimensions (Units: mm)1) The built-in bias resistor allows theconfiguration of an inverter circuitwithout connecting any external in-put resistors (see Equivalent cir-cuit).2) Each bias resistor is a thin-film re-sistor. Since they are completely in-sulated,

DDTA (R1R2 SERIES) PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary NPN Types Available (DDTC) Case Material: Molded Plastic, Green Molding Compound, Note 3. UL Flammability Classification Rating 94V-0 Built-In Biasing Resistors, R1R2 Moisture Sensitivity: L

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorPNP Silicon Surface Mount TransistorLDTA113ZET1Gwith Monolithic Bias Resistor Network Applications Inverter, Interface, Driver 3 Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input 1resistors (see equivalent circuit). 22) The bias resistors consist

SMD Type TransistorsDigital TransistorsDTA113ZE (KDTA113ZE )SOT-523 U nit: m m+0.11.6 -0.1 Features +0.11.0 -0.1+0.050.2 -0.05 0.150.05 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)2 1 The bias resistors consist of thin-film resistors with complete isolation

CHENMKO ENTERPRISE CO.,LTDCHDTA113ZEGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation c