DTA114EB3 Specs and Replacement

Type Designator: DTA114EB3

SMD Transistor Code: A114E

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO-92SP

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DTA114EB3 datasheet

 ..1. Size:254K  cystek

dta114eb3.pdf pdf_icon

DTA114EB3

Spec. No. C252B3 Issued Date 2008.04.28 CYStech Electronics Corp. Revised Date Page No. 1/5 PNP Digital Transistors (Built-in Resistors) DTA114EB3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors with complete... See More ⇒

 7.1. Size:58K  motorola

pdta114eu 6.pdf pdf_icon

DTA114EB3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTA114EU PNP resistor-equipped transistor 1999 Apr 13 Product specification Supersedes data of 1998 May 18 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒

 7.2. Size:54K  motorola

pdta114eef 2.pdf pdf_icon

DTA114EB3

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA114EEF PNP resistor-equipped transistor 1999 May 21 Preliminary specification Supersedes data of 1998 Nov 11 Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA114EEF FEATURES PINNING Power dissipation comparable to SOT23 PIN DESCRIPTION Built-in bias resistors R1 and R2 (typ. 10 k each) 1... See More ⇒

 7.3. Size:58K  motorola

pdta114es 2.pdf pdf_icon

DTA114EB3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PDTA114ES PNP resistor-equipped transistor 1998 May 18 Product specification Supersedes data of 1997 Jul 02 File under Discrete Semiconductors, SC04 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA114ES FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) Simplification o... See More ⇒

Detailed specifications: DTA113EM3, DTA113EM3T5G, DTA113TKA, DTA113ZEFRA, DTA113ZKAFRA, DTA113ZUAFRA, DTA113ZVA, DTA114EA3, TIP122, DTA114EEFRA, DTA114EET1G, DTA114EKAFRA, DTA114EM3, DTA114EM3T5G, DTA114EMFHA, DTA114EN3, DTA114ES3

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