All Transistors. DTA123EM3T5G Datasheet

 

DTA123EM3T5G Datasheet and Replacement


   Type Designator: DTA123EM3T5G
   SMD Transistor Code: 6H
   Material of Transistor: Si
   Polarity: Pre-Biased-PNP
   Built in Bias Resistor R1 = 2.2 kOhm
   Built in Bias Resistor R2 = 2.2 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.26 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 8
   Noise Figure, dB: -
   Package: SOT-723
 

 DTA123EM3T5G Substitution

   - BJT ⓘ Cross-Reference Search

   

DTA123EM3T5G Datasheet (PDF)

 ..1. Size:120K  onsemi
 dta114em3t5g dta114tm3t5g dta114ym3t5g dta115em3t5g dta123em3t5g dta123jm3t5g dta124em3t5g dta124xm3t5g.pdf pdf_icon

DTA123EM3T5G

DTA114EM3T5G SeriesPreferred DevicesDigital Transistors (BRT)PNP Silicon Surface Mount Transistorswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The digital transistorhttp://onsemi.comcontains a single transistor with a monolithic bias network consistingof two resistors;

 0.1. Size:109K  onsemi
 nsvdta123em3t5g.pdf pdf_icon

DTA123EM3T5G

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

 0.2. Size:147K  lrc
 ldta114em3t5g ldta114tm3t5g ldta114ym3t5g ldta115em3t5g ldta123em3t5g ldta123jm3t5g ldta124em3t5g ldta124xm3t5g.pdf pdf_icon

DTA123EM3T5G

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsPNP Silicon Surface Mount TransistorsLDTA114EM3T5GWith Monolithic Bias Resistor NetworkSeriesThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistor3Transistor) contains a single transistor with a monolithic bias networkconsisting of two resi

 5.1. Size:109K  onsemi
 dta123em3.pdf pdf_icon

DTA123EM3T5G

MUN2131, MMUN2131L,MUN5131, DTA123EE,DTA123EM3, NSBA123EF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 2.2 kWwww.onsemi.comPNP Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (B

SHOW MORE

Datasheet: DTA115EUAFRA , DTA115TET1G , DTA115TM3 , DTA115TM3T5G , DTA123EEFRA , DTA123EET1G , DTA123EKAFRA , DTA123EM3 , 2SB817 , DTA123EMFHA , DTA123EUAFRA , DTA123JC3 , DTA123JEFRA , DTA123JET1G , DTA123JKAFRA , DTA123JM3 , DTA123JM3T5G .

History: GES5140 | GES5818 | BU941ZT | 2SC3601C | UN9214J | 40367 | MF1164

Keywords - DTA123EM3T5G transistor datasheet

 DTA123EM3T5G cross reference
 DTA123EM3T5G equivalent finder
 DTA123EM3T5G lookup
 DTA123EM3T5G substitution
 DTA123EM3T5G replacement

 

 
Back to Top

 


 
.