DTA123JET1G Specs and Replacement

Type Designator: DTA123JET1G

SMD Transistor Code: 6M

Material of Transistor: Si

Polarity: Pre-Biased-PNP

Built in Bias Resistor R1 = 2.2 kOhm

Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 0.047

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 80

Noise Figure, dB: -

Package: SC-75

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DTA123JET1G datasheet

 ..1. Size:222K  onsemi

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DTA123JET1G

DTA114EET1 Series, SDTA114EET1 Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network http //onsemi.com This new series of digital transistors is designed to replace a single device and its external resistor bias network. The Bias Resistor Transistor (BRT) contains a single transistor with a monolithic bias PNP SIL... See More ⇒

 0.1. Size:768K  lrc

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DTA123JET1G

LESHAN RADIO COMPANY, LTD. Bias Resistor Transistors LDTA114EET1G Series PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors... See More ⇒

 6.1. Size:54K  motorola

pdta123jef 1.pdf pdf_icon

DTA123JET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D425 PDTA123JEF PNP resistor-equipped transistor 1999 Apr 20 Preliminary specification Philips Semiconductors Preliminary specification PNP resistor-equipped transistor PDTA123JEF FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) 3 handbook, halfpage 3 Simplification of circuit design R1 1 Red... See More ⇒

 6.2. Size:57K  motorola

pdta123je 2.pdf pdf_icon

DTA123JET1G

DISCRETE SEMICONDUCTORS DATA SHEET M3D173 PDTA123JE PNP resistor-equipped transistor Product specification 1998 Nov 25 Supersedes data of 1997 Dec 15 Philips Semiconductors Product specification PNP resistor-equipped transistor PDTA123JE FEATURES Built-in bias resistors R1 and R2 (typ. 2.2 k and 47 k respectively) handbook, halfpage 3 3 Simplification of circuit d... See More ⇒

Detailed specifications: DTA123EET1G, DTA123EKAFRA, DTA123EM3, DTA123EM3T5G, DTA123EMFHA, DTA123EUAFRA, DTA123JC3, DTA123JEFRA, 2N4401, DTA123JKAFRA, DTA123JM3, DTA123JM3T5G, DTA123JMFHA, DTA123JS3, DTA123JUAFRA, DTA123TE, DTA123TET1G

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