All Transistors. 2SA1012Y Datasheet

 

2SA1012Y Datasheet, Equivalent, Cross Reference Search


   Type Designator: 2SA1012Y
   Material of Transistor: Si
   Polarity: PNP
   Maximum Collector Power Dissipation (Pc): 25 W
   Maximum Collector-Base Voltage |Vcb|: 60 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 5 A
   Max. Operating Junction Temperature (Tj): 125 °C
   Transition Frequency (ft): 60 MHz
   Collector Capacitance (Cc): 170 pF
   Forward Current Transfer Ratio (hFE), MIN: 12
   Noise Figure, dB: -
   Package: TO220

 2SA1012Y Transistor Equivalent Substitute - Cross-Reference Search

   

2SA1012Y Datasheet (PDF)

 7.1. Size:215K  toshiba
2sa1012.pdf

2SA1012Y
2SA1012Y

 7.2. Size:343K  utc
2sa1012.pdf

2SA1012Y
2SA1012Y

UNISONIC TECHNOLOGIES CO., LTD 2SA1012 PNP SILICON TRANSISTOR HIGH CURRENT SWITCHING APPLICATION FEATURES *Low Collector Saturation Voltage V =-0.4V(max.) At I =-3A CE(SAT) C*High Speed Switching Time: t =1.0s (Typ.) S*Complementary To 2SC2562 ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 32SA1012L-x-TA3-

 7.3. Size:116K  mospec
2sa1012.pdf

2SA1012Y
2SA1012Y

AAA

 7.4. Size:742K  jiangsu
2sa1012b.pdf

2SA1012Y
2SA1012Y

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012B TRANSISTOR (PNP) FEATURES TO-252-2L -2A,-50V Middle Power Transistor Suitable for Middle Power Driver Low Collector-emitter saturation voltage APPLICATIONS 1. BASE Middle Power Driver 2. COLLECTOR LED Driver Power Supply3. EMITTER MARKING A1012B= Dev

 7.5. Size:1282K  jiangsu
2sa1012.pdf

2SA1012Y
2SA1012Y

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate Transistors 2SA1012 TRANSISTOR (PNP) FEATURES High Current Switching Applications. Low Collector Saturation Voltage High Speed Swithing Time 1. BASE 2. COLLECTOR3. EMITTER MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value UnitVCBO Collector-Base

 7.6. Size:119K  jmnic
2sa1012.pdf

2SA1012Y

Power Transistors www.jmnic.com 2SA1012 Silicon PNP Transistors Features B C E With TO-220 package Complementary to 2SC2562 Absolute Maximum Ratings Tc=25 SYMBOL PARAMETER RATING UNITVCBO Collector to base voltage -60 V VCEO Collector to emitter voltage -50 V VEBO Emitter to base voltage -5 V IB Base current A IC Collector current -5 A PC Collector power dissip

 7.7. Size:318K  lge
2sa1012.pdf

2SA1012Y
2SA1012Y

2SA1012(PNP) TO-220 TransistorTO-2201. BASE 2. COLLECTOTR3. EMITTER 3 21FeaturesHIGH CURRENT SWITCHING APPLICATIONS. Low Collector Saturation Voltage : VCE(SAT) = - 0.4V(MAX) at IC= - 3A High Speed Swithing Time : tstg = 1.0us (Typ.) Complementary to 2SC2562 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value UnitsVCBO Coll

 7.8. Size:583K  semtech
st2sa1012.pdf

2SA1012Y
2SA1012Y

ST 2SA1012 PNP Silicon Epitaxial Planar Transistor for high current switching applications. The transistor is subdivided into two group, O and Y, according to its DC current gain. TO-220 Plastic Package OAbsolute Maximum Ratings (Ta = 25 C) Parameter Symbol Value UnitCollector Base Voltage -VCBO 60 VCollector Emitter Voltage -VCEO 50 VEmitter Base Voltage -VEBO 5 VCollec

 7.9. Size:226K  lzg
2sa1012 3ca1012.pdf

2SA1012Y
2SA1012Y

2SA1012(3CA1012) PNP /SILICON PNP TRANSISTOR : Purpose: High current switching applications. ,, 2SC2562(3DA2562) Features: Low collector saturation voltage, high speed switching time, complementary to 2SC2562(3DA2562). /Absolute maximum ratings(Ta=25)

 7.10. Size:196K  inchange semiconductor
2sa1012-d.pdf

2SA1012Y
2SA1012Y

INCHANGE Semiconductorisc Silicon PNP Power Transistor 2SA1012-DDESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -3ACE(sat) CHigh Switching Speed TO-252 Package-D=Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

 7.11. Size:242K  inchange semiconductor
2sa1012.pdf

2SA1012Y
2SA1012Y

isc Silicon PNP Power Transistor 2SA1012DESCRIPTIONLow Collector Saturation Voltage:V = -0.4(V)(Max)@I = -3ACE(sat) CHigh Switching SpeedComplement to Type 2SC2562100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high current switching applications.ABSOLUTE MAXIMUM RATINGS(T =25)

Datasheet: 2SA1009A , 2SA101 , 2SA1010 , 2SA1011 , 2SA1011D , 2SA1011E , 2SA1012 , 2SA1012O , MPSA42 , 2SA1013 , 2SA1013O , 2SA1013R , 2SA1014 , 2SA1015 , 2SA1015L , 2SA1015LG , 2SA1015LO .

 

 
Back to Top