DTC114EB3 Specs and Replacement

Type Designator: DTC114EB3

SMD Transistor Code: C114E

Material of Transistor: Si

Polarity: Pre-Biased-NPN

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.3 W

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Emitter-Base Voltage |Veb|: 10 V

Maximum Collector Current |Ic max|: 0.05 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 250 MHz

Forward Current Transfer Ratio (hFE), MIN: 30

Noise Figure, dB: -

Package: TO-92SP

 DTC114EB3 Substitution

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DTC114EB3 datasheet

 ..1. Size:252K  cystek

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DTC114EB3

Spec. No. C351B3 Issued Date 2003.08.20 CYStech Electronics Corp. Revised Date 2008.04.28 Page No. 1/5 NPN Digital Transistors (Built-in Resistors) DTC114EB3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors wi... See More ⇒

 7.1. Size:56K  motorola

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DTC114EB3

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 7.2. Size:58K  motorola

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DTC114EB3

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D102 PDTC114EU NPN resistor-equipped transistor 1999 Apr 16 Product specification Supersedes data of 1998 Nov 26 Philips Semiconductors Product specification NPN resistor-equipped transistor PDTC114EU FEATURES Built-in bias resistors R1 and R2 (typ. 10 k each) 3 handbook, 4 columns Simplification of circuit design ... See More ⇒

 7.3. Size:56K  motorola

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DTC114EB3

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Detailed specifications: DTC113EM3, DTC113EM3T5G, DTC113ZKAFRA, DTC113ZN3, DTC113ZS3, DTC113ZUAFRA, DTC113ZVA, DTC114EA3, 2SC5200, DTC114EC3, DTC114EEFRA, DTC114EET1G, DTC114EKAFRA, DTC114EM3, DTC114EM3T5G, DTC114EMFHA, DTC114EN3

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