All Transistors. DTC114EEFRA Datasheet

 

DTC114EEFRA Datasheet and Replacement


   Type Designator: DTC114EEFRA
   SMD Transistor Code: 24
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm
   Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-416
 

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DTC114EEFRA Datasheet (PDF)

 ..1. Size:1522K  rohm
dtc114eefra dtc114ekafra dtc114emfha dtc114euafra.pdf pdf_icon

DTC114EEFRA

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

 5.1. Size:55K  motorola
pdtc114eef 2.pdf pdf_icon

DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

 5.2. Size:55K  philips
pdtc114eef 2.pdf pdf_icon

DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

 6.1. Size:56K  motorola
pdtc114ee 4.pdf pdf_icon

DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

Datasheet: DTC113ZKAFRA , DTC113ZN3 , DTC113ZS3 , DTC113ZUAFRA , DTC113ZVA , DTC114EA3 , DTC114EB3 , DTC114EC3 , 2N5551 , DTC114EET1G , DTC114EKAFRA , DTC114EM3 , DTC114EM3T5G , DTC114EMFHA , DTC114EN3 , DTC114ES3 , DTC114EUAFRA .

History: ME9003 | MPS8000 | 2SB248 | BFT36A | BCX88

Keywords - DTC114EEFRA transistor datasheet

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