All Transistors. DTC114EEFRA Datasheet

 

DTC114EEFRA Datasheet, Equivalent, Cross Reference Search


   Type Designator: DTC114EEFRA
   SMD Transistor Code: 24
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 10 kOhm
   Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 10 V
   Maximum Collector Current |Ic max|: 0.05 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 30
   Noise Figure, dB: -
   Package: SOT-416

 DTC114EEFRA Transistor Equivalent Substitute - Cross-Reference Search

   

DTC114EEFRA Datasheet (PDF)

 ..1. Size:1522K  rohm
dtc114eefra dtc114ekafra dtc114emfha dtc114euafra.pdf

DTC114EEFRA
DTC114EEFRA

DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of

 5.1. Size:55K  motorola
pdtc114eef 2.pdf

DTC114EEFRA
DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

 5.2. Size:55K  philips
pdtc114eef 2.pdf

DTC114EEFRA
DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D425PDTC114EEFNPN resistor-equipped transistor1999 May 31Product specificationSupersedes data of 1998 Nov 11Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFFEATURES Power dissipation comparable toSOT23 Built-in bias resistors R1 and R23handbook, halfpage(typ. 10 k each) 3R1

 6.1. Size:56K  motorola
pdtc114ee 4.pdf

DTC114EEFRA
DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

 6.2. Size:56K  philips
pdtc114ee 4.pdf

DTC114EEFRA
DTC114EEFRA

DISCRETE SEMICONDUCTORSDATA SHEETM3D173PDTC114EENPN resistor-equipped transistor1999 May 18Product specificationSupersedes data of 1998 Nov 26Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EEFEATURES PINNING Built-in bias resistors R1 and R2 (typ. 10 k each)PIN DESCRIPTION Simplification of circuit design1 base/input

 6.3. Size:152K  rohm
dtc114ee.pdf

DTC114EEFRA
DTC114EEFRA

100mA / 50V Digital transistors (with built-in resistors) DTC114EM / DTC114EE / DTC114EUA / DTC114EKA Applications Inverter, Interface, Driver Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-film resistors with complete isolation t

 6.4. Size:82K  rohm
dtc114eeb.pdf

DTC114EEFRA
DTC114EEFRA

Transistors DTC114EEB 100mA / 50V Digital transistors (with built-in resistors) DTC114EEB Applications Dimensions (Unit : mm) Inverter, Interface, Driver EMT3F1.6 0.7 Features 0.261) Built-in bias resistors enable the configuration of (3)an inverter circuit without connecting external input resistors (see equivalent circuit). 2) The bias resistors consist of thin-f

 6.5. Size:71K  rohm
dtc114ee-eua-eka-eca 24 sot416 323 346 23.pdf

DTC114EEFRA
DTC114EEFRA

TransistorsDigital transistors (built-in resistors)DTC114EE / DTC114EUA / DTC114EKADTC114ECA / DTC114ESAFFeatures FExternal dimensions (Units: mm)1) Built-in bias resistors enable theconfiguration of an inverter circuitwithout connecting external inputresistors (see equivalent circuit).2) The bias resistors consist of thin-film resistors with complete isola-tion to allow n

 6.6. Size:545K  diodes
ddtc123ee ddtc143ee ddtc114ee ddtc124ee ddtc144ee ddtc115ee.pdf

DTC114EEFRA
DTC114EEFRA

DDTC (R1 = R2 SERIES) EE NPN PRE-BIASED TRANSISTOR IN SOT523 Features Mechanical Data Epitaxial Planar Die Construction Case: SOT523 Complementary PNP Types Available (DDTA) Case Material: Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 = R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully RoHS Compliant (Notes

 6.7. Size:352K  diodes
ddtc114ee.pdf

DTC114EEFRA
DTC114EEFRA

DDTC (R1 = R2 SERIES) E NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-523 Complementary PNP Types Available (DDTA) Built-In Biasing Resistors, R1 = R2 Dim Min Max Typ B C Lead Free/RoHS Compliant (Note 1) TOP VIEWA 0.15 0.30 0.22 "Green" Device (Note 3 and 4) B 0.75 0.85 0.80 C 1.45 1.75 1.60 M

 6.8. Size:144K  onsemi
sdtc114eet1g.pdf

DTC114EEFRA
DTC114EEFRA

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.9. Size:92K  onsemi
dtc114eet1-series.pdf

DTC114EEFRA
DTC114EEFRA

DTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba

 6.10. Size:144K  onsemi
dtc114eet1g dtc114tet1g dtc114yet1g dtc115eet1g dtc123eet1g.pdf

DTC114EEFRA
DTC114EEFRA

DTC114EET1 Series,SDTC114EET1 SeriesBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singlehttp://onsemi.comdevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkconsisting of two r

 6.11. Size:116K  onsemi
dtc114eet1 8a-m sot416.pdf

DTC114EEFRA
DTC114EEFRA

DTC114EET1 SERIESBias Resistor TransistorNPN Silicon Surface Mount Transistorwith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias Resistorhttp://onsemi.comTransistor) contains a single transistor with a monolithic bias networkconsisting of two resistors; a series ba

 6.12. Size:420K  wietron
dtc114ee.pdf

DTC114EEFRA
DTC114EEFRA

DTC114EE SeriesBias Resistor Transistor NPN Silicon3P b Lead(Pb)-FreeCOLLECTOR123R11R2BASESC-89(SOT-523F)2EMITTERMaximum Ratings (TA=25C unless otherwise noted)Rating Symbol Value UnitCollector-Emitter Voltage 50 VVCEOVCBO VCollector-Base Voltage 50mAIC 100Collector Current-ContinuousThermal CharacteristicsCharacteristics Symbol Max UnitTo

 6.13. Size:409K  willas
dtc114ee.pdf

DTC114EEFRA
DTC114EEFRA

FM120-M WILLASTHRUDTC114EENPN Digital Transistor FM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProducPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize board spa

 6.14. Size:435K  lrc
ldtc114eet1g.pdf

DTC114EEFRA
DTC114EEFRA

LESHAN RADIO COMPANY, LTD.Bias Resistor TransistorsLDTC114EET1G SeriesNPN Silicon Surface Mount TransistorsS-LDTC114EET1G Serieswith Monolithic Bias Resistor NetworkThis new series of digital transistors is designed to replace a singledevice and its external resistor bias network. The BRT (Bias ResistorTransistor) contains a single transistor with a monolithic bias networkcons

 6.15. Size:1006K  kexin
dtc114ee.pdf

DTC114EEFRA
DTC114EEFRA

SMD Type TransistorsDigital TransistorsDTC114EE (KDTC114EE)SOT-523 U nit:m m Features+0.11.6 -0.1+0.11.0 -0.1 Repetitive peak off-state voltages :50V+0.050.2 -0.05 0.1+0.01-0.01 The bias resistors consist of thinfilm resistors with complete isolation2 1to allow negative biasing of the input. Only the on/off conditions need to3+0.25be set fo

 6.16. Size:95K  chenmko
chdtc114eegp.pdf

DTC114EEFRA
DTC114EEFRA

CHENMKO ENTERPRISE CO.,LTDCHDTC114EEGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu

 6.17. Size:671K  cn shikues
dtc114ee.pdf

DTC114EEFRA
DTC114EEFRA

DTC114EENPN Silicon Epitaxial Planar Digital TransistorCollectorFeatures(Output) With built-in bias resistors R1Base Simplify circuit design (Input) Reduce a quantity of parts and R2manufacturing process Emitter(Common)Absolute Maximum Ratings (Ta = 25) Parameter Symbol Value UnitCollector Emitter Voltage VCEO 50 V Input Voltage VI - 10 to +

Datasheet: 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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