DTC123TM3 Datasheet and Replacement
Type Designator: DTC123TM3
SMD Transistor Code: 7C
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Forward Current Transfer Ratio (hFE), MIN: 160
Noise Figure, dB: -
Package: SOT-732
DTC123TM3 Substitution
DTC123TM3 Datasheet (PDF)
dtc123te dtc123tet1g dtc123tm3 dtc123tm3t5g.pdf

MUN2238, MMUN2238L,MUN5238, DTC123TE,DTC123TM3, NSBC123TF3Digital Transistors (BRT)R1 = 2.2 kW, R2 = 8 kWhttp://onsemi.comNPN Transistors with Monolithic BiasPIN CONNECTIONSResistor NetworkPIN 3COLLECTORThis series of digital transistors is designed to replace a single(OUTPUT)PIN 1device and its external resistor bias network. The Bias Resistor R1BASETransistor (
pdtc123tk pdtc123ts pdtc123t ser.pdf

PDTC123T seriesNPN resistor-equipped transistors; R1 = 2.2 k, R2 = openRev. 01 10 March 2006 Product data sheet1. Product profile1.1 General descriptionNPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD)plastic packages.Table 1. Product overviewType number Package PNP complementPhilips JEITA JEDECPDTC123TE SOT416 SC-75 - PDTA123TEPDTC123TK
dtc123tka.pdf

DTC123TKADatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value SMT3VCEO50VIC100mA R12.2kSOT-346(SC-59) lFeatures lInner circuitl l1) Built-In Biasing Resistor2) Built-in bias resistors enable the configuration of an inve
Datasheet: DTC123JM3 , DTC123JM3T5G , DTC123JMFHA , DTC123JN3 , DTC123JUAFRA , DTC123TE , DTC123TET1G , DTC123TKA , 2SD313 , DTC123TM3T5G , DTC123TN3 , DTC123YEFRA , DTC123YKAFRA , DTC123YN3 , DTC123YS3 , DTC123YUAFRA , DTC124EC3 .
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History: FT1310 | 2SB922L



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