DTC123TM3 Specs and Replacement
Type Designator: DTC123TM3
SMD Transistor Code: 7C
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 2.2 kOhm
Absolute Maximum Ratings
Maximum Collector Power Dissipation (Pc): 0.26 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Electrical Characteristics
Forward Current Transfer Ratio (hFE), MIN: 160
Package: SOT-732
DTC123TM3 Substitution
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DTC123TM3 datasheet
dtc123te dtc123tet1g dtc123tm3 dtc123tm3t5g.pdf ![]()
MUN2238, MMUN2238L, MUN5238, DTC123TE, DTC123TM3, NSBC123TF3 Digital Transistors (BRT) R1 = 2.2 kW, R2 = 8 kW http //onsemi.com NPN Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (... See More ⇒
pdtc123tk pdtc123ts pdtc123t ser.pdf ![]()
PDTC123T series NPN resistor-equipped transistors; R1 = 2.2 k , R2 = open Rev. 01 10 March 2006 Product data sheet 1. Product profile 1.1 General description NPN Resistor-Equipped Transistors (RET) family in Surface Mounted Device (SMD) plastic packages. Table 1. Product overview Type number Package PNP complement Philips JEITA JEDEC PDTC123TE SOT416 SC-75 - PDTA123TE PDTC123TK... See More ⇒
DTC123TKA Datasheet NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value SMT3 VCEO 50V IC 100mA R1 2.2k SOT-346(SC-59) lFeatures lInner circuit l l 1) Built-In Biasing Resistor 2) Built-in bias resistors enable the configuration of an inve... See More ⇒
Detailed specifications: DTC123JM3, DTC123JM3T5G, DTC123JMFHA, DTC123JN3, DTC123JUAFRA, DTC123TE, DTC123TET1G, DTC123TKA, A1013, DTC123TM3T5G, DTC123TN3, DTC123YEFRA, DTC123YKAFRA, DTC123YN3, DTC123YS3, DTC123YUAFRA, DTC124EC3
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