DTC124TKAFRA Datasheet, Equivalent, Cross Reference Search
Type Designator: DTC124TKAFRA
SMD Transistor Code: `05
Material of Transistor: Si
Polarity: Pre-Biased-NPN
Built in Bias Resistor R1 = 22 kOhm
Maximum Collector Power Dissipation (Pc): 0.2 W
Maximum Collector-Base Voltage |Vcb|: 50 V
Maximum Collector-Emitter Voltage |Vce|: 50 V
Maximum Emitter-Base Voltage |Veb|: 5 V
Maximum Collector Current |Ic max|: 0.1 A
Max. Operating Junction Temperature (Tj): 150 °C
Transition Frequency (ft): 250 MHz
Forward Current Transfer Ratio (hFE), MIN: 100
Noise Figure, dB: -
Package: SOT-346
DTC124TKAFRA Transistor Equivalent Substitute - Cross-Reference Search
DTC124TKAFRA Datasheet (PDF)
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DTC124TM / DTC124TE / DTC124TUA / Transistors DTC124TKA / DTC124TSA Digital transistors (built-in resistor) DTC124TM / DTC124TE / DTC124TUA / DTC124TKA / DTC124TSA External dimensions (Unit : mm) Features 1) Built-in bias resistors enable the configuration of an 1.2DTC124TM0.2 0.8 0.2inverter circuit without connecting external input (2)(3)resistors (see equivalent
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DDTC (R1-ONLY SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) CDim Min Max Built-In Biasing Resistor, R1 only A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B CB 1.50 1.70 "Green" Device, Note 3 and 4 C 2.70 3.00 Mechanical Data EBD 0.9
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DISCRETE SEMICONDUCTORS DATA SHEETPDTC124T seriesNPN resistor-equipped transistors; R1 = 22 k, R2 = openProduct data sheet 2004 Aug 13Supersedes data of 2004 Apr 06NXP Semiconductors Product data sheetNPN resistor-equipped transistors; PDTC124T seriesR1 = 22 k, R2 = openFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. UNIT S
chdtc124tkgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC124TKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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