EMC3DXV5T5G Datasheet. Specs and Replacement

Type Designator: EMC3DXV5T5G

SMD Transistor Code: U3

Material of Transistor: Si

Polarity: Pre-Biased-NPN*PNP

Built in Bias Resistor R1 = 10 kOhm

Built in Bias Resistor R2 = 10 kOhm

Typical Resistor Ratio R1/R2 = 1

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.357 W

Maximum Collector-Base Voltage |Vcb|: 50 V

Maximum Collector-Emitter Voltage |Vce|: 50 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Forward Current Transfer Ratio (hFE), MIN: 35

Noise Figure, dB: -

Package: SOT-553

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EMC3DXV5T5G datasheet

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EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G Dual Common http //onsemi.com Base-Collector Bias 31 2 Resistor Transistors R1 R2 NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Q2 R2 Resistor Network Q1 R1 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base 45 resis... See More ⇒

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Detailed specifications: EMA4, EMA5, EMB10, EMB10FHA, EMB11, EMB11FHA, EMB2, EMC3DXV5T1G, BC639, EMC4DXV5, EMC4DXV5T1G, EMC5DXV5, EMC5DXV5T1G, EMD12, EMD12FHA, EMD2, EMD22

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