EMC5DXV5T1G Datasheet, Equivalent, Cross Reference Search

   Type Designator: EMC5DXV5T1G
   SMD Transistor Code: U5
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN*PNP
   Built in Bias Resistor R1 = 47 kOhm
   Built in Bias Resistor R2 = 47 kOhm

Typical Resistor Ratio R1/R2 = 1
   Maximum Collector Power Dissipation (Pc): 0.357 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Forward Current Transfer Ratio (hFE), MIN: 80
   Noise Figure, dB: -
   Package: SOT-553

EMC5DXV5T1G Transistor Equivalent Substitute - Cross-Reference Search

EMC5DXV5T1G Datasheet (PDF)

..1. Size:133K onsemi
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EMC2DXV5T1G,EMC3DXV5T1G,EMC4DXV5T1G,EMC5DXV5T1GDual Commonhttp://onsemi.comBase-Collector Bias312Resistor TransistorsR1R2NPN and PNP Silicon Surface MountTransistors with Monolithic BiasQ2R2Resistor NetworkQ1R1The BRT (Bias Resistor Transistor) contains a single transistor witha monolithic bias network consisting of two resistors; a series base45resis

4.1. Size:137K onsemi
emc2dxv5t1 emc3dxv5t1 emc4dxv5t1 emc5dxv5t1.pdf