EMD22FHA Datasheet, Equivalent, Cross Reference Search
Type Designator: EMD22FHA
SMD Transistor Code: D22
Material of Transistor: Si
Polarity: Pre-Biased-NPN*PNP
Built in Bias Resistor R1 = 4.7 kOhm
Built in Bias Resistor R2 = 47 kOhm
Typical Resistor Ratio R1/R2 = 0.1
Maximum Collector Power Dissipation (Pc): 0.15
W
Maximum Collector-Emitter Voltage |Vce|: 50
V
Maximum Emitter-Base Voltage |Veb|: 5
V
Maximum Collector Current |Ic max|: 0.1
A
Max. Operating Junction Temperature (Tj): 150
°C
Transition Frequency (ft): 250
MHz
Forward Current Transfer Ratio (hFE), MIN: 80
Noise Figure, dB: -
Package: SC-107C
EMD22FHA Transistor Equivalent Substitute - Cross-Reference Search
EMD22FHA Datasheet (PDF)
emd22fha umd22nfha.pdf
EMD22FHA / UMD22NFHAEMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 Qualified OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22FHA UMD22NFHAEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParam
emd22 umd22n.pdf
EMD22 / UMD22NDatasheetNPN + PNP Complex Digital Transistors (Bias Resistor Built-in Transistors) OutlineEMT6 UMT6Parameter Value(6)(6)(5)(5)(4)(4)VCC50V(1)(1)(2)IC(MAX.)100mA(2)(3)(3)R14.7kEMD22UMD22N(SC-107C)R2 SOT-363 (SC-88)47kParameter ValueVCC50VIC(MAX.)100mAR14.7kR2
emd22 umd22n.pdf
General purpose (dual digital transistors) EMD22 / UMD22N Features Dimensions (Unit : mm) 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. EMD222) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating (4) (3)(5) (2)interference. (6) (1)1.21.64) Mounting cost and area can be cut in half.
chemd22gp.pdf
CHENMKO ENTERPRISE CO.,LTDCHEMD22GPSURFACE MOUNTDual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
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