2SA1022 PDF and Equivalents Search

 

2SA1022 Specs and Replacement

Type Designator: 2SA1022

Material of Transistor: Si

Polarity: PNP

Absolute Maximum Ratings

Maximum Collector Power Dissipation (Pc): 0.2 W

Maximum Collector-Base Voltage |Vcb|: 30 V

Maximum Collector-Emitter Voltage |Vce|: 20 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.03 A

Max. Operating Junction Temperature (Tj): 150 °C

Electrical Characteristics

Transition Frequency (ft): 150 MHz

Collector Capacitance (Cc): 1.2 pF

Forward Current Transfer Ratio (hFE), MIN: 50

Noise Figure, dB: -

Package: TO236

 2SA1022 Substitution

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2SA1022 datasheet

 ..1. Size:38K  panasonic

2sa1022.pdf pdf_icon

2SA1022

Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings ... See More ⇒

 ..2. Size:38K  panasonic

2sa1022 e.pdf pdf_icon

2SA1022

Transistor 2SA1022 Silicon PNP epitaxial planer type For high-frequency amplification Unit mm Complementary to 2SC2295 +0.2 2.8 0.3 +0.25 Features 0.65 0.15 1.5 0.05 0.65 0.15 High transition frequency fT. Mini type package, allowing downsizing of the equipment and 1 automatic insertion through the tape packing and the magazine packing. 3 2 Absolute Maximum Ratings ... See More ⇒

 ..3. Size:700K  kexin

2sa1022.pdf pdf_icon

2SA1022

SMD Type Transistors PNP Transistors 2SA1022 SOT-23 Unit mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 Features 3 High transition frequency fT. Complementary to 2SC2295 1 2 +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 1.9-0.1 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Vol... See More ⇒

 8.1. Size:172K  toshiba

2sa1020o 2sa1020y.pdf pdf_icon

2SA1022

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit mm Power Switching Applications Low Collector saturation voltage VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation PC = 900 mW High-speed switching tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2... See More ⇒

Detailed specifications: 2SA1017 , 2SA1018 , 2SA1019 , 2SA102 , 2SA1020 , 2SA1020O , 2SA1020Y , 2SA1021 , 2N3055 , 2SA1023 , 2SA1024 , 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 .

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