EMH11FHA Datasheet and Replacement

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

EMH11 / UMH11N / IMH11AEMH11FHA / UMH11NFHA / IMH11AFRADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N EMH11FHA UMH11NFHAR210kW (SC-107C) SOT-353 (SC-88)

DISCRETE SEMICONDUCTORS DATA SHEETPEMH11; PUMH11NPN/NPN resistor-equipped transistors; R1 = 10 k, R2 = 10 kProduct data sheet 2003 Oct 20Supersedes data of 2001 Oct 22NXP Semiconductors Product data sheetNPN/NPN resistor-equipped transistors; PEMH11; PUMH11R1 = 10 k, R2 = 10 kFEATURES QUICK REFERENCE DATA Built-in bias resistorsSYMBOL PARAMETER TYP. MAX. U

EMH11 / UMH11N / IMH11A Transistors General purpose (dual digital transistors) EMH11 / UMH11N / IMH11A External dimensions (Unit : mm) Features 1) Two DTC114E chips in a EMT or UMT or SMT EMH11package. 2) Mounting possible with EMT3 or UMT3 or SMT3 (4) (3)(5) (2)(6) (1)automatic mounting machines. 1.21.63) Transistor elements are independent, eliminating interf

EMH11 / UMH11N / IMH11ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)lOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCC (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R110kWEMH11 UMH11N R2(SC-107C) 10kW SOT-353 (SC-88) SMT6(4) (5) lFeatures (6) 1) Built-In Biasing Resistors, R1

CHENMKO ENTERPRISE CO.,LTDCHEMH11GPSURFACE MOUNT Dual Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-563)SOT-563* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil