All Transistors. 2SA1023 Datasheet

 

2SA1023 Datasheet, Equivalent, Cross Reference Search

Type Designator: 2SA1023

Material of Transistor: Si

Polarity: PNP

Maximum Collector Power Dissipation (Pc): 0.25 W

Maximum Collector-Base Voltage |Vcb|: 70 V

Maximum Emitter-Base Voltage |Veb|: 5 V

Maximum Collector Current |Ic max|: 0.1 A

Max. Operating Junction Temperature (Tj): 150 °C

Transition Frequency (ft): 180 MHz

Collector Capacitance (Cc): 4.5 pF

Forward Current Transfer Ratio (hFE), MIN: 200

Noise Figure, dB: -

Package: TO92

2SA1023 Transistor Equivalent Substitute - Cross-Reference Search

 

2SA1023 Datasheet (PDF)

8.1. 2sa1020.pdf Size:167K _toshiba

2SA1023 2SA1023

2SA1020 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1020 Power Amplifier Applications Unit: mmPower Switching Applications Low Collector saturation voltage: VCE (sat) = -0.5 V (max) (IC = -1 A) High collector power dissipation: PC = 900 mW High-speed switching: tstg = 1.0 s (typ.) Complementary to 2SC2655 Absolute Maximum Ratings (Ta = 2

8.2. 2sa1020l-o.pdf Size:378K _mcc

2SA1023 2SA1023

MCCMicro Commercial ComponentsTM 2SA1020L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

 8.3. 2sa1020l-y.pdf Size:378K _mcc

2SA1023 2SA1023

MCCMicro Commercial ComponentsTM 2SA1020L-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020L-YPhone: (818) 701-4933Fax: (818) 701-4939Features Halogen free available upon request by adding suffix "-HF" Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction tempe

8.4. 2sa1020-o.pdf Size:365K _mcc

2SA1023 2SA1023

MCCMicro Commercial ComponentsTM 2SA1020-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020-YPhone: (818) 701-4933Fax: (818) 701-4939Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammabilit

 8.5. 2sa1020-y.pdf Size:365K _mcc

2SA1023 2SA1023

MCCMicro Commercial ComponentsTM 2SA1020-O20736 Marilla Street ChatsworthMicro Commercial ComponentsCA 913112SA1020-YPhone: (818) 701-4933Fax: (818) 701-4939Features Collector of 0.9Watts of Power Dissipation. PNP Collector-current -2.0A Plastic-Encapsulate Operating and storage junction temperature range: -55 to +150 Epoxy meets UL 94 V-0 flammabilit

8.6. 2sa1020rlrag.pdf Size:92K _onsemi

2SA1023 2SA1023

2SA1020One Watt High Current PNP TransistorFeatures This is a Pb-Free Device*http://onsemi.comMAXIMUM RATINGSVOLTAGE AND CURRENTRating Symbol Value UnitARE NEGATIVE FORCollector-Emitter Voltage VCE 50 VdcPNP TRANSISTORSCollector-Base Voltage VCB 50 VdcEmitter-Base Voltage VEB 5.0 VdcCOLLECTORCollector Current - Continuous IC 2.0 Adc2Total Power Dissipation @

8.7. 2sa1020-d.pdf Size:93K _onsemi

2SA1023 2SA1023

2SA1020One Watt High Current PNP TransistorFeatures This is a Pb-Free Device*http://onsemi.comMAXIMUM RATINGSVOLTAGE AND CURRENTRating Symbol Value UnitARE NEGATIVE FORCollector-Emitter Voltage VCE 50 VdcPNP TRANSISTORSCollector-Base Voltage VCB 50 VdcEmitter-Base Voltage VEB 5.0 VdcCOLLECTORCollector Current - Continuous IC 2.0 Adc2Total Power Dissipation @

8.8. 2sa1022.pdf Size:38K _panasonic

2SA1023 2SA1023

Transistor2SA1022Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC2295+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

8.9. 2sa1022 e.pdf Size:38K _panasonic

2SA1023 2SA1023

Transistor2SA1022Silicon PNP epitaxial planer typeFor high-frequency amplificationUnit: mmComplementary to 2SC2295+0.22.8 0.3+0.25Features0.65 0.15 1.5 0.05 0.65 0.15High transition frequency fT.Mini type package, allowing downsizing of the equipment and1automatic insertion through the tape packing and the magazinepacking.32Absolute Maximum Ratings

8.10. 2sa1020.pdf Size:634K _utc

2SA1023 2SA1023

UNISONIC TECHNOLOGIES CO., LTD 2SA1020 PNP SILICON TRANSISTOR SILICON PNP EPITAXIAL TRANSISTOR DESCRIPTION The UTC 2SA1020 is designed for power amplifier and power switching applications. FEATURES *Low collector saturation voltage: VCE(SAT)=-0.5V(MAX) (IC=-1A) *High speed switching time: tSTG=1.0s(TYP) *Complement to UTC 2SC2655 ORDERING INFORMATION Ord

8.11. 2sa1025 2sa1081 2sa1082.pdf Size:24K _hitachi

2SA1023 2SA1023

2SA1025, 2SA1081, 2SA1082Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC2396, 2SC2543 and 2SC2544OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1025, 2SA1081, 2SA1082Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1025 2SA1081 2SA1082 UnitCollector to base voltage VCBO 60 90 120 VCollector to emitter

8.12. 2sa1029 2sa1030.pdf Size:24K _hitachi

2SA1023 2SA1023

2SA1029, 2SA1030Silicon PNP EpitaxialApplication Low frequency amplifier Complementary pair with 2SC458 and 2SC2308OutlineTO-92 (1)1. Emitter2. Collector3. Base3212SA1029, 2SA1030Absolute Maximum Ratings (Ta = 25C)Item Symbol 2SA1029 2SA1030 UnitCollector to base voltage VCBO 30 55 VCollector to emitter voltage VCEO 30 50 VEmitter to base

8.13. 2sa1020.pdf Size:421K _secos

2SA1023 2SA1023

2SA1020 -2A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free TO-92MODFEATURES N Power amplifier applications G HEmitter Collector Base CLASSIFICATION OF hFE(1) MJLProduct-Rank 2SA1020-O 2SA1020-Y A DRange 70-140 120-240 BKE FCCollector

8.14. 2sa1020.pdf Size:573K _jiangsu

2SA1023 2SA1023

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TRANSISTOR (PNP) 1. EMITTER Power mplifier pplications 2. COLLECTOR3. BASE Equivalent Circuit

8.15. 2sa1021.pdf Size:146K _jmnic

2SA1023 2SA1023

JMnic Product Specification Silicon PNP Power Transistors 2SA1021 DESCRIPTION With TO-126 package High breakdown voltage Large current capacity APPLICATIONS For color TV sound output;converters Inverters applications PINNING PIN DESCRIPTION1 Emitter Collector;connected to 2 mounting base 3 BaseAbsolute maximum ratings(Ta=25) SYMBOL PARAMETER CONDITI

8.16. 2sa1020 to-92mod.pdf Size:237K _lge

2SA1023 2SA1023

2SA1020 TO-92MOD Transistor (PNP)TO-92MOD1. EMITTER 1 22. COLLECTOR 3 3. BASE Features5.8006.200 Power amplifier applications MAXIMUM RATINGS (TA=25 unless otherwise noted) 8.4008.800Symbol Parameter Value Units0.9001.100VCBO Collector-Base Voltage -50 V 0.4000.600VCEO Collector-Emitter Voltage -50 V 13.800VEBO Emitter-Base Voltage -5 V 14.20

8.17. 2sa1020.pdf Size:237K _lge

2SA1023 2SA1023

2SA1020 TO-92L Transistor (PNP)TO-92L1. EMITTER 2. COLLECTOR 3. BASE 2 3 14.700Features 5.100 Power amplifier applications 7.8008.200MAXIMUM RATINGS (TA=25 unless otherwise noted) 0.600Symbol Parameter Value Units 0.800VCBO Collector-Base Voltage -50 V 0.3500.550VCEO Collector-Emitter Voltage -50 V 13.80014.200VEBO Emitter-Base Voltage -5 V IC

8.18. 2sa1020.pdf Size:429K _wietron

2SA1023 2SA1023

2SA1020PNP213231. EMITTER2. COLLECTOR13. BASE TO-92MODValueVCEO -50-50-5-2,090017.251382SA1020=A1020-10 -50u-0.1-40-0.1 u-5.01WEITRONhttp://www.weitron.com.tw2SA1020ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)CharacteristicsTypSymbol Max UnitMinON CHARACTERISTICSDC Current Gain--(IC=-5

8.19. 2sa1020.pdf Size:922K _blue-rocket-elect

2SA1023 2SA1023

2SA1020 Rev.F Mar.-2016 DATA SHEET / Descriptions TO-92LM PNP Silicon PNP transistor in a TO-92LM Plastic Package. / Features ,, 2SC2655 Low collector saturation voltage high speed switching time, complementary pair with 2SC2655. / Applications ,

8.20. 2sa1022.pdf Size:700K _kexin

2SA1023 2SA1023

SMD Type TransistorsPNP Transistors2SA1022SOT-23Unit: mm+0.12.9 -0.1+0.10.4 -0.1 Features3 High transition frequency fT. Complementary to 2SC22951 2+0.1+0.050.95-0.1 0.1-0.01+0.11.9-0.11.Base2.Emitter3.collector Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -30 Collector - Emitter Vol

8.21. 2sa1020.pdf Size:1105K _kexin

2SA1023 2SA1023

SMD Type TransistorsPNP Transistors2SA10201.70 0.1 Features Collector Current Capability IC=-2A Collector Emitter Voltage VCEO=-50V Complementary to 2SC26550.42 0.10.46 0.11.Base2.Collector3.Emitter Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Collector - Base Voltage VCBO -50 Collector - Emitter Voltage VCEO -50 V Emitter -

8.22. 2sa1020gp.pdf Size:117K _chenmko

2SA1023 2SA1023

CHENMKO ENTERPRISE CO.,LTD2SA1020GPSMALL FLAT PNP Epitaxial Transistor VOLTAGE 50 Volts CURRENT 0.5 AmpereAPPLICATION* Power amplifier .FEATURE* Small flat package. (SOT-23) SOT-23* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=-0.5A) * High speed switching time: tstg= 1.0uSec (typ.)* High saturation current capability.(1)(3)CONSTRUCTION(2)* PNP Switching Transi

8.23. 2sa1020i.pdf Size:232K _foshan

2SA1023 2SA1023

2SA1020I(3CG1020I) PNP /SILICON PNP TRANSISTOR :, Purpose: Power amplifier and switching applications. :,, 2SC2655I(3DG2655I) Features: Low collector saturation voltage high speed switching time, complementary pair with 2SC2655I(3DG2655I). /Absolute maximum rating

8.24. 2sa1021.pdf Size:199K _inchange_semiconductor

2SA1023 2SA1023

isc Silicon PNP Power Transistor 2SA1021DESCRIPTIONHigh Collector-Emitter Breakdown Voltage-V = -150V (Min)(BR)CEOComplement to Type 2SC2481Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSColor TV vertical deflection output applications.Color TV class B sound output applications.ABSOLUTE MAXIMUM RATINGS(Ta=25)SYMB

8.25. 2sa1028.pdf Size:195K _inchange_semiconductor

2SA1023 2SA1023

isc Silicon PNP Power Transistor 2SA1028DESCRIPTIONHigh Current CapabilityGood Linearity of hFECollector-Emitter Breakdown Voltage-: V = -100V(Min.)(BR)CEOMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for audio and general purpose applications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

Datasheet: 2SA1018 , 2SA1019 , 2SA102 , 2SA1020 , 2SA1020O , 2SA1020Y , 2SA1021 , 2SA1022 , 2N3904 , 2SA1024 , 2SA1025 , 2SA1026 , 2SA1027 , 2SA1028 , 2SA1029 , 2SA103 , 2SA1030 .

 

 
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