All Transistors. EMH3FHA Datasheet

 

EMH3FHA Datasheet, Equivalent, Cross Reference Search


   Type Designator: EMH3FHA
   SMD Transistor Code: H3
   Material of Transistor: Si
   Polarity: Pre-Biased-NPN
   Built in Bias Resistor R1 = 4.7 kOhm
   Maximum Collector Power Dissipation (Pc): 0.15 W
   Maximum Collector-Base Voltage |Vcb|: 50 V
   Maximum Collector-Emitter Voltage |Vce|: 50 V
   Maximum Emitter-Base Voltage |Veb|: 5 V
   Maximum Collector Current |Ic max|: 0.1 A
   Max. Operating Junction Temperature (Tj): 150 °C
   Transition Frequency (ft): 250 MHz
   Forward Current Transfer Ratio (hFE), MIN: 100
   Noise Figure, dB: -
   Package: SC-107C

 EMH3FHA Transistor Equivalent Substitute - Cross-Reference Search

   

EMH3FHA Datasheet (PDF)

 ..1. Size:1263K  rohm
emh3fha umh3nfha imh3afra.pdf

EMH3FHA
EMH3FHA

EMH3FHA / UMH3NFHA / IMH3AFRAEMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N EMH3FHA UMH3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4) (5

 ..2. Size:1222K  rohm
emh3fha umh3nfha.pdf

EMH3FHA
EMH3FHA

EMH3FHA / UMH3NFHA / IMH3AFRAEMH3 / UMH3N / IMH3ADatasheetNPN 100mA 50V Complex Digital Transistors (Bias Resistor Built-in Transistors)AEC-Q101 QualifiedlOutlineEMT6 UMT6Parameter Tr1 and Tr2(6) (6) (5) VCEO (5) 50V (4) (4) (1) (1) IC(MAX.) (2) 100mA (2) (3) (3) R14.7kWEMH3 UMH3N EMH3FHA UMH3NFHA(SC-107C) SOT-353 (SC-88) SMT6(4) (5

Datasheet: 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: MMBC1009F1

 

 
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